Synthesis of nanosized silicon carbide in a free expiring plasma jet

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon carbide (SiC) nanomaterials can be successfully used for ceramics production and semiconductor applications. The possibility of the SiC nanopowder synthesis in an electrodischarge silicon-carbon plasma jet generated by a pulsed coaxial magnetoplasma accelerator (CMPA) is shown in this paper. A plasma jet expired in a free space of a reactor chamber filled with argon. The synthesized product was analyzed without any preparation by some modern techniques such as X-ray diffraction, scanning and transmission electron microscopy. The resulting product was compared with nanopowders synthesized in a plasma flow influencing on a copper barrier.

Original languageEnglish
Title of host publication2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479971022
DOIs
Publication statusPublished - 1 Jul 2015
Event2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Omsk, Russian Federation
Duration: 21 May 201523 May 2015

Other

Other2015 International Siberian Conference on Control and Communications, SIBCON 2015
CountryRussian Federation
CityOmsk
Period21.5.1523.5.15

Fingerprint

Plasma jets
Silicon carbide
Magnetoplasma
Plasma flow
Nanostructured materials
Particle accelerators
Argon
Semiconductor materials
Transmission electron microscopy
Copper
X ray diffraction
Silicon
Scanning electron microscopy
Carbon

Keywords

  • coaxial magnetoplasma accelerator
  • plasmodynamic synthesis
  • silicon carbide
  • transmission electron microscopy
  • X-ray diffractometry

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Control and Systems Engineering

Cite this

Nikitin, D. S., Sivkov, A., Pak, A., Shanenkova, Y., & Ivashutenko, A. (2015). Synthesis of nanosized silicon carbide in a free expiring plasma jet. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings [7147160] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SIBCON.2015.7147160

Synthesis of nanosized silicon carbide in a free expiring plasma jet. / Nikitin, Dmitry Sergeevich; Sivkov, A.; Pak, A.; Shanenkova, Yu; Ivashutenko, A.

2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. 7147160.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nikitin, DS, Sivkov, A, Pak, A, Shanenkova, Y & Ivashutenko, A 2015, Synthesis of nanosized silicon carbide in a free expiring plasma jet. in 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings., 7147160, Institute of Electrical and Electronics Engineers Inc., 2015 International Siberian Conference on Control and Communications, SIBCON 2015, Omsk, Russian Federation, 21.5.15. https://doi.org/10.1109/SIBCON.2015.7147160
Nikitin DS, Sivkov A, Pak A, Shanenkova Y, Ivashutenko A. Synthesis of nanosized silicon carbide in a free expiring plasma jet. In 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7147160 https://doi.org/10.1109/SIBCON.2015.7147160
Nikitin, Dmitry Sergeevich ; Sivkov, A. ; Pak, A. ; Shanenkova, Yu ; Ivashutenko, A. / Synthesis of nanosized silicon carbide in a free expiring plasma jet. 2015 International Siberian Conference on Control and Communications, SIBCON 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015.
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