Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 μm. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.

Original languageEnglish
Pages (from-to)389-392
Number of pages4
JournalMaterials Letters
Volume139
DOIs
Publication statusPublished - 15 Feb 2015

Fingerprint

Diamond films
diamond films
Multilayers
Nucleation
Multilayer films
nucleation
synthesis
Diamond
Methane
Ion bombardment
bombardment
Chemical vapor deposition
Diamonds
Current density
methane
diamonds
vapor deposition
current density
Scanning electron microscopy
scanning electron microscopy

Keywords

  • Carbon materials
  • Crystal growth
  • Multilayer structure
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

@article{a8375d5f7527402a90d44009af84632f,
title = "Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation",
abstract = "We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 μm. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.",
keywords = "Carbon materials, Crystal growth, Multilayer structure, Thin films",
author = "Linnik, {S. A.} and Gaydaychuk, {A. V.}",
year = "2015",
month = "2",
day = "15",
doi = "10.1016/j.matlet.2014.10.142",
language = "English",
volume = "139",
pages = "389--392",
journal = "Materials Letters",
issn = "0167-577X",
publisher = "Elsevier",

}

TY - JOUR

T1 - Synthesis of multilayer polycrystalline diamond films using bias-induced secondary nucleation

AU - Linnik, S. A.

AU - Gaydaychuk, A. V.

PY - 2015/2/15

Y1 - 2015/2/15

N2 - We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 μm. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.

AB - We developed a new method for the synthesis of multilayer polycrystalline diamond films based on negative bias-induced secondary nucleation on a diamond surface induced by intense ion bombardment during CVD. The periodic formation of new nucleation centers and subsequent deposition allow us to synthesize films of up to 20 layers with a thickness up to 50 μm. The multilayer diamond films were characterized by SEM and XRD. Dependence of the nucleation density on the methane concentration and current density was investigated. This technique provides multilayer diamond films for a wide range of applications.

KW - Carbon materials

KW - Crystal growth

KW - Multilayer structure

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=84910594827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84910594827&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.10.142

DO - 10.1016/j.matlet.2014.10.142

M3 - Article

VL - 139

SP - 389

EP - 392

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -