Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper

A. D. Pogrebnjak, S. M. Duvanov, A. D. Mikhaliov, V. I. Lavrentiev, V. V. Stayko, A. V. Markov, Yu F. Ivanov, V. P. Rotstein, D. I. Proskurovsky

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Cu(111),(100) single crystals implanted with Ti up to 8 × 1017 cm-2 followed by high-current electron beam annealing (HCEB) have been investigated by means of transmission electron microscopy (TEM), Rutherford back-scattering (RBS), nuclear reaction elastic resonance (NRER) and scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure after Ti implantation became multi-component. It was found that this layer included a surface amorphous carbon film, a layer consisting of TiC, a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170-180 nm. A small-angle disorientation up to 5° between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2-4 nm. The Cu structure essentially changed. The Cu layer contacting the carbide became a nano-dimensional substructure with an average crystallite size of 50-70 nm. At a depth of 0.1 μm the Cu structure is represented as a disoriented striped substructure: the discrete disorientation between the stripes was about 6-7°. Net dislocation substructure was observed inside the stripes, the dislocation scalar density of which was <ρ>=5.2×1010 cm-2.

Original languageEnglish
Pages (from-to)90-96
Number of pages7
JournalSurface and Coatings Technology
Volume89
Issue number1-2
DOIs
Publication statusPublished - 15 Feb 1997

Fingerprint

Surface structure
Copper
Electron beams
Carbon films
Single crystals
electron beams
copper
dosage
substructures
Carbides
disorientation
single crystals
Annealing
Nuclear reactions
carbides
Amorphous carbon
Amorphous films
high current
Crystallite size
annealing

Keywords

  • Annealing
  • Carbide
  • Copper
  • Implantation
  • Profile
  • Structure

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Pogrebnjak, A. D., Duvanov, S. M., Mikhaliov, A. D., Lavrentiev, V. I., Stayko, V. V., Markov, A. V., ... Proskurovsky, D. I. (1997). Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper. Surface and Coatings Technology, 89(1-2), 90-96. https://doi.org/10.1016/S0257-8972(96)02933-7

Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper. / Pogrebnjak, A. D.; Duvanov, S. M.; Mikhaliov, A. D.; Lavrentiev, V. I.; Stayko, V. V.; Markov, A. V.; Ivanov, Yu F.; Rotstein, V. P.; Proskurovsky, D. I.

In: Surface and Coatings Technology, Vol. 89, No. 1-2, 15.02.1997, p. 90-96.

Research output: Contribution to journalArticle

Pogrebnjak, AD, Duvanov, SM, Mikhaliov, AD, Lavrentiev, VI, Stayko, VV, Markov, AV, Ivanov, YF, Rotstein, VP & Proskurovsky, DI 1997, 'Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper', Surface and Coatings Technology, vol. 89, no. 1-2, pp. 90-96. https://doi.org/10.1016/S0257-8972(96)02933-7
Pogrebnjak, A. D. ; Duvanov, S. M. ; Mikhaliov, A. D. ; Lavrentiev, V. I. ; Stayko, V. V. ; Markov, A. V. ; Ivanov, Yu F. ; Rotstein, V. P. ; Proskurovsky, D. I. / Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper. In: Surface and Coatings Technology. 1997 ; Vol. 89, No. 1-2. pp. 90-96.
@article{b90a1a0fe51d4ceab61fce454194be66,
title = "Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper",
abstract = "Cu(111),(100) single crystals implanted with Ti up to 8 × 1017 cm-2 followed by high-current electron beam annealing (HCEB) have been investigated by means of transmission electron microscopy (TEM), Rutherford back-scattering (RBS), nuclear reaction elastic resonance (NRER) and scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure after Ti implantation became multi-component. It was found that this layer included a surface amorphous carbon film, a layer consisting of TiC, a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170-180 nm. A small-angle disorientation up to 5° between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2-4 nm. The Cu structure essentially changed. The Cu layer contacting the carbide became a nano-dimensional substructure with an average crystallite size of 50-70 nm. At a depth of 0.1 μm the Cu structure is represented as a disoriented striped substructure: the discrete disorientation between the stripes was about 6-7°. Net dislocation substructure was observed inside the stripes, the dislocation scalar density of which was <ρ>=5.2×1010 cm-2.",
keywords = "Annealing, Carbide, Copper, Implantation, Profile, Structure",
author = "Pogrebnjak, {A. D.} and Duvanov, {S. M.} and Mikhaliov, {A. D.} and Lavrentiev, {V. I.} and Stayko, {V. V.} and Markov, {A. V.} and Ivanov, {Yu F.} and Rotstein, {V. P.} and Proskurovsky, {D. I.}",
year = "1997",
month = "2",
day = "15",
doi = "10.1016/S0257-8972(96)02933-7",
language = "English",
volume = "89",
pages = "90--96",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Surface and near surface structure and composition of high-dose implanted and electron beam annealed single crystal copper

AU - Pogrebnjak, A. D.

AU - Duvanov, S. M.

AU - Mikhaliov, A. D.

AU - Lavrentiev, V. I.

AU - Stayko, V. V.

AU - Markov, A. V.

AU - Ivanov, Yu F.

AU - Rotstein, V. P.

AU - Proskurovsky, D. I.

PY - 1997/2/15

Y1 - 1997/2/15

N2 - Cu(111),(100) single crystals implanted with Ti up to 8 × 1017 cm-2 followed by high-current electron beam annealing (HCEB) have been investigated by means of transmission electron microscopy (TEM), Rutherford back-scattering (RBS), nuclear reaction elastic resonance (NRER) and scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure after Ti implantation became multi-component. It was found that this layer included a surface amorphous carbon film, a layer consisting of TiC, a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170-180 nm. A small-angle disorientation up to 5° between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2-4 nm. The Cu structure essentially changed. The Cu layer contacting the carbide became a nano-dimensional substructure with an average crystallite size of 50-70 nm. At a depth of 0.1 μm the Cu structure is represented as a disoriented striped substructure: the discrete disorientation between the stripes was about 6-7°. Net dislocation substructure was observed inside the stripes, the dislocation scalar density of which was <ρ>=5.2×1010 cm-2.

AB - Cu(111),(100) single crystals implanted with Ti up to 8 × 1017 cm-2 followed by high-current electron beam annealing (HCEB) have been investigated by means of transmission electron microscopy (TEM), Rutherford back-scattering (RBS), nuclear reaction elastic resonance (NRER) and scanning electron microscopy (SEM). Ti, O, C concentration profile behaviour in Cu single crystals has been studied. Cu layer structure after Ti implantation became multi-component. It was found that this layer included a surface amorphous carbon film, a layer consisting of TiC, a layer consisting of (110)CuTi/(111)TiC and a subsequent Cu single crystal possessing subgrains of 170-180 nm. A small-angle disorientation up to 5° between the subgrains was observed. As a result of HCEB irradiation, a portion of carbon film evaporated, and Ti carbide dispersed to 2-4 nm. The Cu structure essentially changed. The Cu layer contacting the carbide became a nano-dimensional substructure with an average crystallite size of 50-70 nm. At a depth of 0.1 μm the Cu structure is represented as a disoriented striped substructure: the discrete disorientation between the stripes was about 6-7°. Net dislocation substructure was observed inside the stripes, the dislocation scalar density of which was <ρ>=5.2×1010 cm-2.

KW - Annealing

KW - Carbide

KW - Copper

KW - Implantation

KW - Profile

KW - Structure

UR - http://www.scopus.com/inward/record.url?scp=0031071208&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031071208&partnerID=8YFLogxK

U2 - 10.1016/S0257-8972(96)02933-7

DO - 10.1016/S0257-8972(96)02933-7

M3 - Article

AN - SCOPUS:0031071208

VL - 89

SP - 90

EP - 96

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1-2

ER -