Surface analysis of smart power top metal

IR thermal measurement and source potential mapping

M. Berkani, S. Lefebvre, G. Rostaing, M. Riccio, A. Irace, R. Ruffilli, Ph Dupuy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages395-398
Number of pages4
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - 25 Jul 2016
Externally publishedYes
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period12.6.1616.6.16

Fingerprint

Thermal aging
Surface analysis
Metallizing
Temperature measurement
Short circuit currents
Aging of materials
Health
Degradation
Monitoring
Metals
Hot Temperature
Power MOSFET

Keywords

  • ageing indicator
  • reliability
  • short-circuit
  • smart power devices
  • thermal measurements

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R., & Dupuy, P. (2016). Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 395-398). [7520861] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520861

Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. / Berkani, M.; Lefebvre, S.; Rostaing, G.; Riccio, M.; Irace, A.; Ruffilli, R.; Dupuy, Ph.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 395-398 7520861 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Berkani, M, Lefebvre, S, Rostaing, G, Riccio, M, Irace, A, Ruffilli, R & Dupuy, P 2016, Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520861, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 395-398, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12.6.16. https://doi.org/10.1109/ISPSD.2016.7520861
Berkani M, Lefebvre S, Rostaing G, Riccio M, Irace A, Ruffilli R et al. Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 395-398. 7520861. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2016.7520861
Berkani, M. ; Lefebvre, S. ; Rostaing, G. ; Riccio, M. ; Irace, A. ; Ruffilli, R. ; Dupuy, Ph. / Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 395-398 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).
@inproceedings{96a8549d51734e1ea1816bfeb80f7d1d,
title = "Surface analysis of smart power top metal: IR thermal measurement and source potential mapping",
abstract = "Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.",
keywords = "ageing indicator, reliability, short-circuit, smart power devices, thermal measurements",
author = "M. Berkani and S. Lefebvre and G. Rostaing and M. Riccio and A. Irace and R. Ruffilli and Ph Dupuy",
year = "2016",
month = "7",
day = "25",
doi = "10.1109/ISPSD.2016.7520861",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "395--398",
booktitle = "Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016",
address = "United States",

}

TY - GEN

T1 - Surface analysis of smart power top metal

T2 - IR thermal measurement and source potential mapping

AU - Berkani, M.

AU - Lefebvre, S.

AU - Rostaing, G.

AU - Riccio, M.

AU - Irace, A.

AU - Ruffilli, R.

AU - Dupuy, Ph

PY - 2016/7/25

Y1 - 2016/7/25

N2 - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

AB - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

KW - ageing indicator

KW - reliability

KW - short-circuit

KW - smart power devices

KW - thermal measurements

UR - http://www.scopus.com/inward/record.url?scp=84982181958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982181958&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2016.7520861

DO - 10.1109/ISPSD.2016.7520861

M3 - Conference contribution

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 395

EP - 398

BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -