Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

M. Berkani, S. Lefebvre, G. Rostaing, M. Riccio, A. Irace, R. Ruffilli, Ph Dupuy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	395-398
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520861
Publication status	Published - 25 Jul 2016
Externally published	Yes
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country	Czech Republic
City	Prague
Period	12.6.16 → 16.6.16

Fingerprint

Keywords

ageing indicator
reliability
short-circuit
smart power devices
thermal measurements

ASJC Scopus subject areas

Engineering(all)

Cite this

Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R., & Dupuy, P. (2016). Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 395-398). [7520861] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520861

Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. / Berkani, M.; Lefebvre, S.; Rostaing, G.; Riccio, M.; Irace, A.; Ruffilli, R.; Dupuy, Ph.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 395-398 7520861 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Berkani, M, Lefebvre, S, Rostaing, G, Riccio, M, Irace, A, Ruffilli, R & Dupuy, P 2016, Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520861, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 395-398, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12.6.16. https://doi.org/10.1109/ISPSD.2016.7520861

Berkani M, Lefebvre S, Rostaing G, Riccio M, Irace A, Ruffilli R et al. Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 395-398. 7520861. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2016.7520861

Berkani, M. ; Lefebvre, S. ; Rostaing, G. ; Riccio, M. ; Irace, A. ; Ruffilli, R. ; Dupuy, Ph. / Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 395-398 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

@inproceedings{96a8549d51734e1ea1816bfeb80f7d1d,

title = "Surface analysis of smart power top metal: IR thermal measurement and source potential mapping",

abstract = "Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.",

keywords = "ageing indicator, reliability, short-circuit, smart power devices, thermal measurements",

author = "M. Berkani and S. Lefebvre and G. Rostaing and M. Riccio and A. Irace and R. Ruffilli and Ph Dupuy",

year = "2016",

month = jul

day = "25",

doi = "10.1109/ISPSD.2016.7520861",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "395--398",

booktitle = "Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016",

address = "United States",

note = "28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 ; Conference date: 12-06-2016 Through 16-06-2016",

}

TY - GEN

T1 - Surface analysis of smart power top metal

T2 - 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

AU - Berkani, M.

AU - Lefebvre, S.

AU - Rostaing, G.

AU - Riccio, M.

AU - Irace, A.

AU - Ruffilli, R.

AU - Dupuy, Ph

PY - 2016/7/25

Y1 - 2016/7/25

N2 - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

AB - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

KW - ageing indicator

KW - reliability

KW - short-circuit

KW - smart power devices

KW - thermal measurements

UR - http://www.scopus.com/inward/record.url?scp=84982181958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84982181958&partnerID=8YFLogxK

U2 - 10.1109/ISPSD.2016.7520861

DO - 10.1109/ISPSD.2016.7520861

M3 - Conference contribution

AN - SCOPUS:84982181958

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 395

EP - 398

BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 12 June 2016 through 16 June 2016

ER -

Access to Document

10.1109/ISPSD.2016.7520861