Abstract
Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 395-398 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781467387682 |
| DOIs | |
| Publication status | Published - 25 Jul 2016 |
| Externally published | Yes |
| Event | 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016 |
Publication series
| Name | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
|---|---|
| Volume | 2016-July |
| ISSN (Print) | 1063-6854 |
Conference
| Conference | 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 |
|---|---|
| Country | Czech Republic |
| City | Prague |
| Period | 12.6.16 → 16.6.16 |
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Keywords
- ageing indicator
- reliability
- short-circuit
- smart power devices
- thermal measurements
ASJC Scopus subject areas
- Engineering(all)
Cite this
Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. / Berkani, M.; Lefebvre, S.; Rostaing, G.; Riccio, M.; Irace, A.; Ruffilli, R.; Dupuy, Ph.
Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 395-398 7520861 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Surface analysis of smart power top metal
T2 - IR thermal measurement and source potential mapping
AU - Berkani, M.
AU - Lefebvre, S.
AU - Rostaing, G.
AU - Riccio, M.
AU - Irace, A.
AU - Ruffilli, R.
AU - Dupuy, Ph
PY - 2016/7/25
Y1 - 2016/7/25
N2 - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.
AB - Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.
KW - ageing indicator
KW - reliability
KW - short-circuit
KW - smart power devices
KW - thermal measurements
UR - http://www.scopus.com/inward/record.url?scp=84982181958&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84982181958&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2016.7520861
DO - 10.1109/ISPSD.2016.7520861
M3 - Conference contribution
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 395
EP - 398
BT - Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PB - Institute of Electrical and Electronics Engineers Inc.
ER -