Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

Abstract

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

Original language	English
Title of host publication	Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	395-398
Number of pages	4
ISBN (Electronic)	9781467387682
DOIs	https://doi.org/10.1109/ISPSD.2016.7520861
Publication status	Published - 25 Jul 2016
Externally published	Yes
Event	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic Duration: 12 Jun 2016 → 16 Jun 2016

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2016-July
ISSN (Print)	1063-6854

Conference

Conference	28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
Country	Czech Republic
City	Prague
Period	12.6.16 → 16.6.16

Keywords

ageing indicator
reliability
short-circuit
smart power devices
thermal measurements

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/ISPSD.2016.7520861

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Cite this

Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R., & Dupuy, P. (2016). Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 395-398). [7520861] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520861

Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. / Berkani, M.; Lefebvre, S.; Rostaing, G.; Riccio, M.; Irace, A.; Ruffilli, R.; Dupuy, Ph.

Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 395-398 7520861 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Berkani, M, Lefebvre, S, Rostaing, G, Riccio, M, Irace, A, Ruffilli, R & Dupuy, P 2016, Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. in Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016., 7520861, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2016-July, Institute of Electrical and Electronics Engineers Inc., pp. 395-398, 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016, Prague, Czech Republic, 12.6.16. https://doi.org/10.1109/ISPSD.2016.7520861

Berkani M, Lefebvre S, Rostaing G, Riccio M, Irace A, Ruffilli R et al. Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 395-398. 7520861. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2016.7520861

Berkani, M. ; Lefebvre, S. ; Rostaing, G. ; Riccio, M. ; Irace, A. ; Ruffilli, R. ; Dupuy, Ph. / Surface analysis of smart power top metal : IR thermal measurement and source potential mapping. Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 395-398 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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