Surface analysis of smart power top metal: IR thermal measurement and source potential mapping

M. Berkani, S. Lefebvre, G. Rostaing, M. Riccio, A. Irace, R. Ruffilli, Ph Dupuy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.

Original languageEnglish
Title of host publicationProceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages395-398
Number of pages4
ISBN (Electronic)9781467387682
DOIs
Publication statusPublished - 25 Jul 2016
Externally publishedYes
Event28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 - Prague, Czech Republic
Duration: 12 Jun 201616 Jun 2016

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2016-July
ISSN (Print)1063-6854

Conference

Conference28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016
CountryCzech Republic
CityPrague
Period12.6.1616.6.16

Keywords

  • ageing indicator
  • reliability
  • short-circuit
  • smart power devices
  • thermal measurements

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Berkani, M., Lefebvre, S., Rostaing, G., Riccio, M., Irace, A., Ruffilli, R., & Dupuy, P. (2016). Surface analysis of smart power top metal: IR thermal measurement and source potential mapping. In Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 (pp. 395-398). [7520861] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2016-July). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2016.7520861