@inproceedings{96a8549d51734e1ea1816bfeb80f7d1d,
title = "Surface analysis of smart power top metal: IR thermal measurement and source potential mapping",
abstract = "Reliability of modern power MOSFETs is assessed through accelerated electro-thermal aging tests. Top metallization layer reconstruction is one of the most observed degradation mechanisms in power devices operating under short circuit conditions. Experimental analysis results focused on temperature measurement and source potential mapping during ageing will be presented to corroborate previous results on electrical parameters evolution and to give new tools for health monitoring.",
keywords = "ageing indicator, reliability, short-circuit, smart power devices, thermal measurements",
author = "M. Berkani and S. Lefebvre and G. Rostaing and M. Riccio and A. Irace and R. Ruffilli and Ph Dupuy",
year = "2016",
month = jul,
day = "25",
doi = "10.1109/ISPSD.2016.7520861",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "395--398",
booktitle = "Proceedings of the 2016 28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016",
address = "United States",
note = "28th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2016 ; Conference date: 12-06-2016 Through 16-06-2016",
}