TY - JOUR
T1 - Surface alloying of stainless steel 316 with copper using pulsed electron-beam melting of film-substrate system
AU - Rotshtein, V. P.
AU - Ivanov, Yu F.
AU - Markov, A. B.
AU - Proskurovsky, D. I.
AU - Karlik, K. V.
AU - Oskomov, K. V.
AU - Uglov, B. V.
AU - Kuleshov, A. K.
AU - Novitskaya, M. V.
AU - Dub, S. N.
AU - Pauleau, Y.
AU - Shulepov, I. A.
PY - 2006/6/20
Y1 - 2006/6/20
N2 - The surface morphology, chemical composition, microstructure, nanohardness, and tribological properties of a film (Cu)-substrate (stainless steel 316) system subjected to pulsed melting with a low-energy (20-30 keV), high-current electron beam (2-3 μs, 2.8-8.4 J/cm2) have been investigated. The film was deposited by sputtering a Cu target in the Ar plasma of a microwave discharge. To prevent the local delamination of the film due to the cratering, the substrates were repeatedly pre-irradiated with 8-10 J/cm2. Single pulsed melting of this system resulted in the formation of a diffusion layer of thickness 120-170 nm near the interface, irrespective of the energy density. The layer has the subgrain structure consisting of the γ-Fe-solid solution and submicrometer or nanocrystalline Cu particles. The nanohardness and the wear resistance of the surface layer of thickness 0.5-1 μm, including the molten film and the diffusion layer, non-monotonically vary with energy density, reaching a maximum in the range of 4.3-6.3 J/cm2. As the pulse number is increased to five in the same range of energy density, the film dissolves in the substrate, and a ∼2-μm-thick surface layer is formed which contains ∼20 at.% Cu. Under these conditions, the segregation of Cu during resolidification leads to the formation of two-phase nanocrystalline layers separating γ-phase grains.
AB - The surface morphology, chemical composition, microstructure, nanohardness, and tribological properties of a film (Cu)-substrate (stainless steel 316) system subjected to pulsed melting with a low-energy (20-30 keV), high-current electron beam (2-3 μs, 2.8-8.4 J/cm2) have been investigated. The film was deposited by sputtering a Cu target in the Ar plasma of a microwave discharge. To prevent the local delamination of the film due to the cratering, the substrates were repeatedly pre-irradiated with 8-10 J/cm2. Single pulsed melting of this system resulted in the formation of a diffusion layer of thickness 120-170 nm near the interface, irrespective of the energy density. The layer has the subgrain structure consisting of the γ-Fe-solid solution and submicrometer or nanocrystalline Cu particles. The nanohardness and the wear resistance of the surface layer of thickness 0.5-1 μm, including the molten film and the diffusion layer, non-monotonically vary with energy density, reaching a maximum in the range of 4.3-6.3 J/cm2. As the pulse number is increased to five in the same range of energy density, the film dissolves in the substrate, and a ∼2-μm-thick surface layer is formed which contains ∼20 at.% Cu. Under these conditions, the segregation of Cu during resolidification leads to the formation of two-phase nanocrystalline layers separating γ-phase grains.
KW - Film-substrate system
KW - Pulsed electron-beam melting
KW - Surface alloying
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U2 - 10.1016/j.surfcoat.2005.11.007
DO - 10.1016/j.surfcoat.2005.11.007
M3 - Article
AN - SCOPUS:33646164656
VL - 200
SP - 6378
EP - 6383
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - 22-23 SPEC. ISS.
ER -