Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41•1023 - 3.48•1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.
|Journal||Journal of Physics: Conference Series|
|Publication status||Published - 10 Feb 2017|
|Event||8th All-Russian Conference on Low Temperature Plasma in the Processes of Functional Coating Preparation, LTP 2016 - Kazan, Russian Federation|
Duration: 6 Nov 2016 → 9 Nov 2016
ASJC Scopus subject areas
- Physics and Astronomy(all)