Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films

D. V. Kiseleva, Y. N. Yurjev, Y. V. Petrakov, D. V. Sidelev, D. V. Korzhenko, Evgenii V. Erofeev

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Silicon nitride (Si3N4) films were deposited by magnetron sputtering of silicon target in (Ar+N2) atmosphere with refractive index 1.95 - 2.05. The results of Fourier transform infrared (FTIR) spectrophotometry showed Si-N bonds in the thin films with concentration 2.41•1023 - 3.48•1023 cm-3. Dependences of deposition rate, optical characteristics and surface morphology on rate of N2 flow and properties of magnetron power supply.

Original languageEnglish
Article number012028
JournalJournal of Physics: Conference Series
Volume789
Issue number1
DOIs
Publication statusPublished - 10 Feb 2017
Event8th All-Russian Conference on Low Temperature Plasma in the Processes of Functional Coating Preparation, LTP 2016 - Kazan, Russian Federation
Duration: 6 Nov 20169 Nov 2016

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silicon nitrides
power supplies
spectrophotometry
magnetron sputtering
refractivity
atmospheres
silicon
thin films

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Study on the influence of the magnetron power supply on the properties of the Silicon Nitride films. / Kiseleva, D. V.; Yurjev, Y. N.; Petrakov, Y. V.; Sidelev, D. V.; Korzhenko, D. V.; Erofeev, Evgenii V.

In: Journal of Physics: Conference Series, Vol. 789, No. 1, 012028, 10.02.2017.

Research output: Contribution to journalArticle

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