Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies

T. A. Nguyen, S. Lefebvre, P. Y. Joubert, D. Labrousse, S. Bontemps

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ageing of the top level of power dies (aluminum reconstruction and bond wire lift-off) which is due to power cycling of power semiconductor modules results in the redistribution of the current lines in the metallization layer but also in the elementary cells of the power dies (MOSFET or IGBT) with a critical risk of failure when local current density or local temperature reach a critical value. The paper reports on the estimation of the distribution of DC currents flowing in the metallization layer in correlation to the local degradation of the aluminum sheet resistance and to the bond wire lift-off. The local distribution of the current in the metallization layer is obtained from a map of the potential of the source metallization. Results help to understand physical origin of failures after ageing of the top level of power semiconductor dies.

Original languageEnglish
Title of host publicationProceedings - PCIM Europe 2013
Subtitle of host publicationInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PublisherMesago PCIM GmbH
Pages583-590
Number of pages8
ISBN (Print)9783800735051
Publication statusPublished - 1 Jan 2013
Externally publishedYes
EventInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 - Nuremberg, Germany
Duration: 14 May 201316 May 2013

Publication series

NamePCIM Europe Conference Proceedings
ISSN (Electronic)2191-3358

Conference

ConferenceInternational Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013
CountryGermany
CityNuremberg
Period14.5.1316.5.13

Fingerprint

Metallizing
Wire
Semiconductor materials
Aluminum
Aging of materials
Aluminum sheet
Sheet resistance
Insulated gate bipolar transistors (IGBT)
Current density
Degradation
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Nguyen, T. A., Lefebvre, S., Joubert, P. Y., Labrousse, D., & Bontemps, S. (2013). Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. In Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (pp. 583-590). (PCIM Europe Conference Proceedings). Mesago PCIM GmbH.

Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. / Nguyen, T. A.; Lefebvre, S.; Joubert, P. Y.; Labrousse, D.; Bontemps, S.

Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH, 2013. p. 583-590 (PCIM Europe Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nguyen, TA, Lefebvre, S, Joubert, PY, Labrousse, D & Bontemps, S 2013, Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. in Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. PCIM Europe Conference Proceedings, Mesago PCIM GmbH, pp. 583-590, International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013, Nuremberg, Germany, 14.5.13.
Nguyen TA, Lefebvre S, Joubert PY, Labrousse D, Bontemps S. Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. In Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH. 2013. p. 583-590. (PCIM Europe Conference Proceedings).
Nguyen, T. A. ; Lefebvre, S. ; Joubert, P. Y. ; Labrousse, D. ; Bontemps, S. / Study on aluminum reconstruction and bond wire lift-off effects on current distribution in power semiconductor dies. Proceedings - PCIM Europe 2013: International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management. Mesago PCIM GmbH, 2013. pp. 583-590 (PCIM Europe Conference Proceedings).
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