Abstract
The cross section of a Si surface layer implanted with <sup>64</sup>Zn<sup>+</sup> and <sup>16</sup>O<sup>+</sup> ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted into this layer, which are measured by means of secondary-ion mass spectrometry, as well as their changes arising from heat treatment, are analyzed. The surface morphology is examined with the help of atomic-force microscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 486-495 |
| Number of pages | 10 |
| Journal | Journal of Surface Investigation |
| Volume | 9 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 8 May 2015 |
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Keywords
- ion implantation
- nanoparticles
- silicon
- zinc
- zinc oxide
ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Study of the properties of a Si surface layer implanted with <sup>64</sup>Zn<sup>+</sup> and <sup>16</sup>O<sup>+</sup> ions during the formation of ZnO nanoparticles under thermal annealing. / Privezentsev, V. V.; Kulikauskas, V. S.; Zatekin, V. V.; Petrov, D. V.; Trifonov, A. Yu; Batrakov, A. A.
In: Journal of Surface Investigation, Vol. 9, No. 3, 08.05.2015, p. 486-495.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of the properties of a Si surface layer implanted with 64Zn+ and 16O+ ions during the formation of ZnO nanoparticles under thermal annealing
AU - Privezentsev, V. V.
AU - Kulikauskas, V. S.
AU - Zatekin, V. V.
AU - Petrov, D. V.
AU - Trifonov, A. Yu
AU - Batrakov, A. A.
PY - 2015/5/8
Y1 - 2015/5/8
N2 - The cross section of a Si surface layer implanted with 64Zn+ and 16O+ ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted into this layer, which are measured by means of secondary-ion mass spectrometry, as well as their changes arising from heat treatment, are analyzed. The surface morphology is examined with the help of atomic-force microscopy.
AB - The cross section of a Si surface layer implanted with 64Zn+ and 16O+ ions is visualized via high-resolution transmission electron microscopy, and its evolution as a result of thermal annealing is investigated. The profiles of impurities implanted into this layer, which are measured by means of secondary-ion mass spectrometry, as well as their changes arising from heat treatment, are analyzed. The surface morphology is examined with the help of atomic-force microscopy.
KW - ion implantation
KW - nanoparticles
KW - silicon
KW - zinc
KW - zinc oxide
UR - http://www.scopus.com/inward/record.url?scp=84930623794&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84930623794&partnerID=8YFLogxK
U2 - 10.1134/S1027451015020160
DO - 10.1134/S1027451015020160
M3 - Article
AN - SCOPUS:84930623794
VL - 9
SP - 486
EP - 495
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 3
ER -