Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons

Abstract

Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

Original language	English
Title of host publication	CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	870-871
Number of pages	2
ISBN (Print)	9789663354163
DOIs	https://doi.org/10.1109/CRMICO.2014.6959670
Publication status	Published - 14 Nov 2014
Event	2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 - Sevastopol, Crimea, Ukraine Duration: 7 Sep 2014 → 13 Sep 2014

Other

Other	2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014
Country	Ukraine
City	Sevastopol, Crimea
Period	7.9.14 → 13.9.14

ASJC Scopus subject areas

Computer Networks and Communications

Access to Document

10.1109/CRMICO.2014.6959670

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Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. / Gradoboev, A. V.

CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 870-871 6959670.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gradoboev, AV 2014, Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. in CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings., 6959670, Institute of Electrical and Electronics Engineers Inc., pp. 870-871, 2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014, Sevastopol, Crimea, Ukraine, 7.9.14. https://doi.org/10.1109/CRMICO.2014.6959670

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AB - Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

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