Abstract
Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.
| Original language | English |
|---|---|
| Title of host publication | CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 870-871 |
| Number of pages | 2 |
| ISBN (Print) | 9789663354163 |
| DOIs | |
| Publication status | Published - 14 Nov 2014 |
| Event | 2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 - Sevastopol, Crimea, Ukraine Duration: 7 Sep 2014 → 13 Sep 2014 |
Other
| Other | 2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 |
|---|---|
| Country | Ukraine |
| City | Sevastopol, Crimea |
| Period | 7.9.14 → 13.9.14 |
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ASJC Scopus subject areas
- Computer Networks and Communications
Cite this
Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. / Gradoboev, A. V.
CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 870-871 6959670.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons
AU - Gradoboev, A. V.
PY - 2014/11/14
Y1 - 2014/11/14
N2 - Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.
AB - Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.
UR - http://www.scopus.com/inward/record.url?scp=84915821031&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84915821031&partnerID=8YFLogxK
U2 - 10.1109/CRMICO.2014.6959670
DO - 10.1109/CRMICO.2014.6959670
M3 - Conference contribution
SN - 9789663354163
SP - 870
EP - 871
BT - CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -