Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

Original languageEnglish
Title of host publicationCriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages870-871
Number of pages2
ISBN (Print)9789663354163
DOIs
Publication statusPublished - 14 Nov 2014
Event2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 - Sevastopol, Crimea, Ukraine
Duration: 7 Sep 201413 Sep 2014

Other

Other2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014
CountryUkraine
CitySevastopol, Crimea
Period7.9.1413.9.14

ASJC Scopus subject areas

  • Computer Networks and Communications

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    Gradoboev, A. V. (2014). Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. In CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings (pp. 870-871). [6959670] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CRMICO.2014.6959670