Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons

Division for Control and Diagnostics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

Original language	English
Title of host publication	CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	870-871
Number of pages	2
ISBN (Print)	9789663354163
DOIs	https://doi.org/10.1109/CRMICO.2014.6959670
Publication status	Published - 14 Nov 2014
Event	2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 - Sevastopol, Crimea, Ukraine Duration: 7 Sep 2014 → 13 Sep 2014

Other

Other	2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014
Country	Ukraine
City	Sevastopol, Crimea
Period	7.9.14 → 13.9.14

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ASJC Scopus subject areas

Computer Networks and Communications

Cite this

Gradoboev, A. V. (2014). Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. In CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings (pp. 870-871). [6959670] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CRMICO.2014.6959670

Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. / Gradoboev, A. V.

CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 870-871 6959670.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gradoboev, AV 2014, Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons. in CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings., 6959670, Institute of Electrical and Electronics Engineers Inc., pp. 870-871, 2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014, Sevastopol, Crimea, Ukraine, 7.9.14. https://doi.org/10.1109/CRMICO.2014.6959670

@inproceedings{3c4cce0714764aee92805e919092553e,

title = "Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons",

abstract = "Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.",

author = "Gradoboev, {A. V.}",

year = "2014",

month = "11",

day = "14",

doi = "10.1109/CRMICO.2014.6959670",

language = "English",

isbn = "9789663354163",

pages = "870--871",

booktitle = "CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014 ; Conference date: 07-09-2014 Through 13-09-2014",

}

TY - GEN

T1 - Study of the memory effect in 3-cm band gunn diodes under irradiation by fast neutrons

AU - Gradoboev, A. V.

PY - 2014/11/14

Y1 - 2014/11/14

N2 - Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

AB - Irradiation by fast neutrons provokes parameters degradation of semiconductor devices. On the other hand, operating conditions of the devices may lead to partial (or complete) annealing of defects introduced by ionizing radiation. The main aim - investigation of the memory effect in the Gunn diodes of the 3-cm wavelength range was carried out on the basis of n+-n-n++ GaAs structures under irradiation by fast neutrons. As a result of researches the existence of memory effect is established, the appearance of which leads to an increase radiation resistance under subsequent irradiation. The possible mechanisms of memory effect are considered.

UR - http://www.scopus.com/inward/record.url?scp=84915821031&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84915821031&partnerID=8YFLogxK

U2 - 10.1109/CRMICO.2014.6959670

DO - 10.1109/CRMICO.2014.6959670

M3 - Conference contribution

AN - SCOPUS:84915821031

SN - 9789663354163

SP - 870

EP - 871

BT - CriMiCo 2014 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 24th International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2014

Y2 - 7 September 2014 through 13 September 2014

ER -

Access to Document

10.1109/CRMICO.2014.6959670