STUDY OF THE ″BLOCKING EFFECT″ FOR FAST ELECTRONS IN A SILICON CRYSTAL.

D. E. Popov, S. V. Plotnikov, V. V. Kaplin, S. A. Vorobiev

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of intensity inversion in the patterns of angular distribution of the electrons with energies up to 2. 5 MeV scattered along the low-index directions of a thin silicon crystal is studied. This phenomena is observed when the angle of beam incidence relative to a low-index axis of the crystal is large compared with the critical angle of channeling. The discussion is given in the scope of a model based upon bound states of channeled electrons, as a result of excitation of secondary bound states of electrons with atomic rows and planes.

Original languageEnglish
Pages (from-to)395-402
Number of pages8
JournalPhysica Status Solidi (B) Basic Research
Volume101
Issue number1
Publication statusPublished - Sep 1980

Fingerprint

Silicon
Crystals
Electrons
silicon
crystals
electrons
Angular distribution
angular distribution
incidence
inversions
excitation
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

STUDY OF THE ″BLOCKING EFFECT″ FOR FAST ELECTRONS IN A SILICON CRYSTAL. / Popov, D. E.; Plotnikov, S. V.; Kaplin, V. V.; Vorobiev, S. A.

In: Physica Status Solidi (B) Basic Research, Vol. 101, No. 1, 09.1980, p. 395-402.

Research output: Contribution to journalArticle

Popov, D. E. ; Plotnikov, S. V. ; Kaplin, V. V. ; Vorobiev, S. A. / STUDY OF THE ″BLOCKING EFFECT″ FOR FAST ELECTRONS IN A SILICON CRYSTAL. In: Physica Status Solidi (B) Basic Research. 1980 ; Vol. 101, No. 1. pp. 395-402.
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