Abstract
The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 517-521 |
| Number of pages | 5 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 64 |
| Issue number | 5 |
| Publication status | Published - 1997 |
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ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
Cite this
Study of phase separation in Ti-Co-N thin films on silicon substrate. / Gromov, D. G.; Mochalov, A. I.; Pugachevich, V. P.; Kirilenko, E. P.; Trifonov, A. Yu.
In: Applied Physics A: Materials Science and Processing, Vol. 64, No. 5, 1997, p. 517-521.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Study of phase separation in Ti-Co-N thin films on silicon substrate
AU - Gromov, D. G.
AU - Mochalov, A. I.
AU - Pugachevich, V. P.
AU - Kirilenko, E. P.
AU - Trifonov, A. Yu
PY - 1997
Y1 - 1997
N2 - The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.
AB - The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.
UR - http://www.scopus.com/inward/record.url?scp=0031146282&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031146282&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031146282
VL - 64
SP - 517
EP - 521
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 5
ER -