Study of phase separation in Ti-Co-N thin films on silicon substrate

D. G. Gromov, A. I. Mochalov, V. P. Pugachevich, E. P. Kirilenko, A. Yu Trifonov

Research output: Contribution to journal › Article

12 Citations (Scopus)

Abstract

The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.

Original languageEnglish
Pages (from-to)517-521
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume64
Issue number5
Publication statusPublished - 1997

Fingerprint

Silicon
Phase separation
Nitrogen
Thin films
silicon
Substrates
thin films
nitrogen
Secondary ion mass spectrometry
silicon alloys
Intermetallics
interactions
Annealing
secondary ion mass spectrometry
intermetallics
solid phases
Atoms
annealing
atoms

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Gromov, D. G., Mochalov, A. I., Pugachevich, V. P., Kirilenko, E. P., & Trifonov, A. Y. (1997). Study of phase separation in Ti-Co-N thin films on silicon substrate. Applied Physics A: Materials Science and Processing, 64(5), 517-521.

Study of phase separation in Ti-Co-N thin films on silicon substrate. / Gromov, D. G.; Mochalov, A. I.; Pugachevich, V. P.; Kirilenko, E. P.; Trifonov, A. Yu.

In: Applied Physics A: Materials Science and Processing, Vol. 64, No. 5, 1997, p. 517-521.

Research output: Contribution to journal › Article

Gromov, DG, Mochalov, AI, Pugachevich, VP, Kirilenko, EP & Trifonov, AY 1997, 'Study of phase separation in Ti-Co-N thin films on silicon substrate', Applied Physics A: Materials Science and Processing, vol. 64, no. 5, pp. 517-521.
Gromov DG, Mochalov AI, Pugachevich VP, Kirilenko EP, Trifonov AY. Study of phase separation in Ti-Co-N thin films on silicon substrate. Applied Physics A: Materials Science and Processing. 1997;64(5):517-521.
Gromov, D. G. ; Mochalov, A. I. ; Pugachevich, V. P. ; Kirilenko, E. P. ; Trifonov, A. Yu. / Study of phase separation in Ti-Co-N thin films on silicon substrate. In: Applied Physics A: Materials Science and Processing. 1997 ; Vol. 64, No. 5. pp. 517-521.
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AU - Trifonov, A. Yu

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N2 - The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.

AB - The interaction between Si and thin films of Ti73Co27 and Ti73Co27-N during thermal annealing has been studied by SIMS, AES and XRD methods. It has been shown that in case of Ti73Co27 the CoSi2 layer was not formed and the formation of ternary suicide compounds CoTiSi and Co3Ti2Si took place. At the same time in case of Ti73Co27-N the bottom layer CoSi2 and the upper layer based on TiN were formed. The interaction behaviour has been found to depend on nitrogen concentration in initial film. For high amount of nitrogen the diffusion of Si atoms into upper layer and Si3N4 phase formation were observed. The possible variants of solid-phase interaction between silicon and the alloys containing intermetallic compounds and influence of nitrogen on this process are discussed.

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