Study of luminescent properties of Al-Si-N films

Abstract

In this study, we analyzed the optical properties of Ai-Si-N coatings applied on silica glass. Under the effect of optical radiation and electron beam, intense luminescence of Al-Si-N films with complex emission spectra is observed. Photoluminescence excited by the radiation with energy of 4.47 eV, which falls within the opaque range of the films, is likely connected with surface luminescence centers. The film luminescence demonstrates that luminescence spectra excited in different ways do not coincide. This indicates that there are different luminescence centers in Al-Si-N films. These centers are excited with different efficiency at different types of excitation.

Original language	English
Article number	052003
Journal	Journal of Physics: Conference Series
Volume	1115
Issue number	5
DOIs	https://doi.org/10.1088/1742-6596/1115/5/052003
Publication status	Published - 27 Nov 2018
Event	6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 - Tomsk, Russian Federation Duration: 16 Sep 2018 → 22 Sep 2018

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1088/1742-6596/1115/5/052003

Fingerprint Dive into the research topics of 'Study of luminescent properties of Al-Si-N films'. Together they form a unique fingerprint.

Cite this

@article{8a40d35cbb3447b7999509cf6880b7ad,

title = "Study of luminescent properties of Al-Si-N films",

abstract = "In this study, we analyzed the optical properties of Ai-Si-N coatings applied on silica glass. Under the effect of optical radiation and electron beam, intense luminescence of Al-Si-N films with complex emission spectra is observed. Photoluminescence excited by the radiation with energy of 4.47 eV, which falls within the opaque range of the films, is likely connected with surface luminescence centers. The film luminescence demonstrates that luminescence spectra excited in different ways do not coincide. This indicates that there are different luminescence centers in Al-Si-N films. These centers are excited with different efficiency at different types of excitation.",

author = "Gritsenko, {B. P.} and Shtan'Ko, {V. F.} and Stepanov, {S. A.} and Nogaibekova, {G. Zh} and Sergeev, {V. P.}",

year = "2018",

month = nov,

day = "27",

doi = "10.1088/1742-6596/1115/5/052003",

language = "English",

volume = "1115",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing Ltd.",

number = "5",

note = "6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018 ; Conference date: 16-09-2018 Through 22-09-2018",

}

TY - JOUR

T1 - Study of luminescent properties of Al-Si-N films

AU - Gritsenko, B. P.

AU - Shtan'Ko, V. F.

AU - Stepanov, S. A.

AU - Nogaibekova, G. Zh

AU - Sergeev, V. P.

PY - 2018/11/27

Y1 - 2018/11/27

N2 - In this study, we analyzed the optical properties of Ai-Si-N coatings applied on silica glass. Under the effect of optical radiation and electron beam, intense luminescence of Al-Si-N films with complex emission spectra is observed. Photoluminescence excited by the radiation with energy of 4.47 eV, which falls within the opaque range of the films, is likely connected with surface luminescence centers. The film luminescence demonstrates that luminescence spectra excited in different ways do not coincide. This indicates that there are different luminescence centers in Al-Si-N films. These centers are excited with different efficiency at different types of excitation.

AB - In this study, we analyzed the optical properties of Ai-Si-N coatings applied on silica glass. Under the effect of optical radiation and electron beam, intense luminescence of Al-Si-N films with complex emission spectra is observed. Photoluminescence excited by the radiation with energy of 4.47 eV, which falls within the opaque range of the films, is likely connected with surface luminescence centers. The film luminescence demonstrates that luminescence spectra excited in different ways do not coincide. This indicates that there are different luminescence centers in Al-Si-N films. These centers are excited with different efficiency at different types of excitation.

UR - http://www.scopus.com/inward/record.url?scp=85058236371&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058236371&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1115/5/052003

DO - 10.1088/1742-6596/1115/5/052003

M3 - Conference article

AN - SCOPUS:85058236371

VL - 1115

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 5

M1 - 052003

T2 - 6th International Congress on Energy Fluxes and Radiation Effects 2018, EFRE 2018

Y2 - 16 September 2018 through 22 September 2018

ER -