Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

T. A. Nguyen, P. Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.

Original languageEnglish
Pages (from-to)1127-1135
Number of pages9
JournalMicroelectronics Reliability
Volume51
Issue number6
DOIs
Publication statusPublished - 1 Jun 2011
Externally publishedYes

Fingerprint

Semiconductor devices
Metallizing
Eddy currents
Power electronics
eddy currents
semiconductor devices
Aging of materials
deterioration
electronics
modules
Semiconductor materials
causes
sensors
electric potential
Deterioration
Sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. / Nguyen, T. A.; Joubert, P. Y.; Lefebvre, S.; Chaplier, G.; Rousseau, L.

In: Microelectronics Reliability, Vol. 51, No. 6, 01.06.2011, p. 1127-1135.

Research output: Contribution to journalArticle

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