Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

T. A. Nguyen, P. Y. Joubert, S. Lefebvre, G. Chaplier, L. Rousseau

Research output: Contribution to journal › Article

Abstract

The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.

Original language	English
Pages (from-to)	1127-1135
Number of pages	9
Journal	Microelectronics Reliability
Volume	51
Issue number	6
DOIs	https://doi.org/10.1016/j.microrel.2011.02.002
Publication status	Published - 1 Jun 2011
Externally published	Yes

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Safety, Risk, Reliability and Quality
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Cite this

Nguyen, T. A., Joubert, P. Y., Lefebvre, S., Chaplier, G., & Rousseau, L. (2011). Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique. Microelectronics Reliability, 51(6), 1127-1135. https://doi.org/10.1016/j.microrel.2011.02.002

@article{a3212e0f1dbf45099677d59de31f0591,

title = "Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique",

abstract = "The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.",

author = "Nguyen, {T. A.} and Joubert, {P. Y.} and S. Lefebvre and G. Chaplier and L. Rousseau",

year = "2011",

month = "6",

day = "1",

doi = "10.1016/j.microrel.2011.02.002",

language = "English",

volume = "51",

pages = "1127--1135",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique

AU - Nguyen, T. A.

AU - Joubert, P. Y.

AU - Lefebvre, S.

AU - Chaplier, G.

AU - Rousseau, L.

PY - 2011/6/1

Y1 - 2011/6/1

N2 - The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.

AB - The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to highlight the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results show the ability to monitor the state and the evolution of the metallization ageing with such a technique.

UR - http://www.scopus.com/inward/record.url?scp=79955903924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955903924&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2011.02.002

DO - 10.1016/j.microrel.2011.02.002

M3 - Article

AN - SCOPUS:79955903924

VL - 51

SP - 1127

EP - 1135

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 6

ER -

Access to Document

10.1016/j.microrel.2011.02.002