Study and production of thin-film memristors based on TiO 2 - TiO x layers

E. V. Zhidik, P. E. Troyan, Y. V. Sakharov, Y. S. Zhidik, D. V. Korzhenko

Research output: Contribution to journalConference article

Abstract

Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO 2 ) and nonstoichiometric (TiO x ) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.

Original languageEnglish
Article number012022
JournalIOP Conference Series: Materials Science and Engineering
Volume498
Issue number1
DOIs
Publication statusPublished - 16 Apr 2019
Event2nd International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies, AMNST 2017 - Moscow, Russian Federation
Duration: 1 Jun 20172 Jun 2017

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Memristors
Rare Earth Metals
Thin films
Titanium oxides
Precious metals
Rare earths
Metals
titanium dioxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)

Cite this

Study and production of thin-film memristors based on TiO 2 - TiO x layers. / Zhidik, E. V.; Troyan, P. E.; Sakharov, Y. V.; Zhidik, Y. S.; Korzhenko, D. V.

In: IOP Conference Series: Materials Science and Engineering, Vol. 498, No. 1, 012022, 16.04.2019.

Research output: Contribution to journalConference article

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