Abstract
Results of production of thin-film memristor MIM-structures based on the stoichiometric (TiO 2 ) and nonstoichiometric (TiO x ) titanium oxides and contacts without precious and rare-earth metals are given. It is shown that such memristor structures without precious metals show its operability only after the process of electrical forming.
Original language | English |
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Article number | 012022 |
Journal | IOP Conference Series: Materials Science and Engineering |
Volume | 498 |
Issue number | 1 |
DOIs | |
Publication status | Published - 16 Apr 2019 |
Event | 2nd International Telecommunication Conference on Advanced Micro- and Nanoelectronic Systems and Technologies, AMNST 2017 - Moscow, Russian Federation Duration: 1 Jun 2017 → 2 Jun 2017 |
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)