Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer

Ferdinand Scholz, Kamran Forghani, Martin Klein, Oliver Klein, Ute Kaiser, Benjamin Neuschl, Ingo Tischer, Martin Feneberg, Klaus Thonke, Sergey Lazarev, Sondes Bauer, Tilo Baumbach

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have decreased the dislocation density in AlxGa1̃xN epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nanomask layer. Taking together results obtained by transmission electron microscopy, photoluminescence, cathodoluminescence, and X-ray diffraction, we were able to derive a schematic model about the AlGaN growth on the SiN nanomask: On the open pores of the nano-mask, Garich AlGaN hillocks develop, whereas on the SiN layer Al-rich AlGaN nucleates owing to the reduced selectivity of Al-containing material. Once the hillocks are formed, Ga-rich material is more efficiently incorporated on the inclined side-facets leading to an Al-rich coverage of the central c-plane part of the hillocks. We observed a bending of the dislocations towards the side-facets of the hillocks, which eventually leads to dislocation bundles with increased probability of dislocation annihilation, separated by fairly defect-free regions. Thus, we could achieve a significant reduction of the edge-type dislocation density in these epitaxial layers.

Original languageEnglish
Article number08JJ07
JournalJapanese Journal of Applied Physics
Volume52
Issue number8 PART 2
DOIs
Publication statusPublished - Aug 2013
Externally publishedYes

Fingerprint

Epitaxial layers
Dislocations (crystals)
Heterojunctions
interlayers
Defects
Cathodoluminescence
defects
Schematic diagrams
Sapphire
Masks
Photoluminescence
flat surfaces
Transmission electron microscopy
X ray diffraction
circuit diagrams
cathodoluminescence
bundles
sapphire
masks
selectivity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Scholz, F., Forghani, K., Klein, M., Klein, O., Kaiser, U., Neuschl, B., ... Baumbach, T. (2013). Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer. Japanese Journal of Applied Physics, 52(8 PART 2), [08JJ07]. https://doi.org/10.7567/JJAP.52.08JJ07

Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer. / Scholz, Ferdinand; Forghani, Kamran; Klein, Martin; Klein, Oliver; Kaiser, Ute; Neuschl, Benjamin; Tischer, Ingo; Feneberg, Martin; Thonke, Klaus; Lazarev, Sergey; Bauer, Sondes; Baumbach, Tilo.

In: Japanese Journal of Applied Physics, Vol. 52, No. 8 PART 2, 08JJ07, 08.2013.

Research output: Contribution to journalArticle

Scholz, F, Forghani, K, Klein, M, Klein, O, Kaiser, U, Neuschl, B, Tischer, I, Feneberg, M, Thonke, K, Lazarev, S, Bauer, S & Baumbach, T 2013, 'Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer', Japanese Journal of Applied Physics, vol. 52, no. 8 PART 2, 08JJ07. https://doi.org/10.7567/JJAP.52.08JJ07
Scholz, Ferdinand ; Forghani, Kamran ; Klein, Martin ; Klein, Oliver ; Kaiser, Ute ; Neuschl, Benjamin ; Tischer, Ingo ; Feneberg, Martin ; Thonke, Klaus ; Lazarev, Sergey ; Bauer, Sondes ; Baumbach, Tilo. / Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer. In: Japanese Journal of Applied Physics. 2013 ; Vol. 52, No. 8 PART 2.
@article{e20f0f0de77e4dfab62b69b2b4c3ab88,
title = "Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer",
abstract = "We have decreased the dislocation density in AlxGa1̃xN epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nanomask layer. Taking together results obtained by transmission electron microscopy, photoluminescence, cathodoluminescence, and X-ray diffraction, we were able to derive a schematic model about the AlGaN growth on the SiN nanomask: On the open pores of the nano-mask, Garich AlGaN hillocks develop, whereas on the SiN layer Al-rich AlGaN nucleates owing to the reduced selectivity of Al-containing material. Once the hillocks are formed, Ga-rich material is more efficiently incorporated on the inclined side-facets leading to an Al-rich coverage of the central c-plane part of the hillocks. We observed a bending of the dislocations towards the side-facets of the hillocks, which eventually leads to dislocation bundles with increased probability of dislocation annihilation, separated by fairly defect-free regions. Thus, we could achieve a significant reduction of the edge-type dislocation density in these epitaxial layers.",
author = "Ferdinand Scholz and Kamran Forghani and Martin Klein and Oliver Klein and Ute Kaiser and Benjamin Neuschl and Ingo Tischer and Martin Feneberg and Klaus Thonke and Sergey Lazarev and Sondes Bauer and Tilo Baumbach",
year = "2013",
month = "8",
doi = "10.7567/JJAP.52.08JJ07",
language = "English",
volume = "52",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "8 PART 2",

}

TY - JOUR

T1 - Studies on defect reduction in AlGaN heterostructures by integrating an in-situ SiN interlayer

AU - Scholz, Ferdinand

AU - Forghani, Kamran

AU - Klein, Martin

AU - Klein, Oliver

AU - Kaiser, Ute

AU - Neuschl, Benjamin

AU - Tischer, Ingo

AU - Feneberg, Martin

AU - Thonke, Klaus

AU - Lazarev, Sergey

AU - Bauer, Sondes

AU - Baumbach, Tilo

PY - 2013/8

Y1 - 2013/8

N2 - We have decreased the dislocation density in AlxGa1̃xN epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nanomask layer. Taking together results obtained by transmission electron microscopy, photoluminescence, cathodoluminescence, and X-ray diffraction, we were able to derive a schematic model about the AlGaN growth on the SiN nanomask: On the open pores of the nano-mask, Garich AlGaN hillocks develop, whereas on the SiN layer Al-rich AlGaN nucleates owing to the reduced selectivity of Al-containing material. Once the hillocks are formed, Ga-rich material is more efficiently incorporated on the inclined side-facets leading to an Al-rich coverage of the central c-plane part of the hillocks. We observed a bending of the dislocations towards the side-facets of the hillocks, which eventually leads to dislocation bundles with increased probability of dislocation annihilation, separated by fairly defect-free regions. Thus, we could achieve a significant reduction of the edge-type dislocation density in these epitaxial layers.

AB - We have decreased the dislocation density in AlxGa1̃xN epitaxial layers grown on sapphire wafers by introducing an in-situ deposited SiN nanomask layer. Taking together results obtained by transmission electron microscopy, photoluminescence, cathodoluminescence, and X-ray diffraction, we were able to derive a schematic model about the AlGaN growth on the SiN nanomask: On the open pores of the nano-mask, Garich AlGaN hillocks develop, whereas on the SiN layer Al-rich AlGaN nucleates owing to the reduced selectivity of Al-containing material. Once the hillocks are formed, Ga-rich material is more efficiently incorporated on the inclined side-facets leading to an Al-rich coverage of the central c-plane part of the hillocks. We observed a bending of the dislocations towards the side-facets of the hillocks, which eventually leads to dislocation bundles with increased probability of dislocation annihilation, separated by fairly defect-free regions. Thus, we could achieve a significant reduction of the edge-type dislocation density in these epitaxial layers.

UR - http://www.scopus.com/inward/record.url?scp=84883144067&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84883144067&partnerID=8YFLogxK

U2 - 10.7567/JJAP.52.08JJ07

DO - 10.7567/JJAP.52.08JJ07

M3 - Article

VL - 52

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 8 PART 2

M1 - 08JJ07

ER -