Studies of relativistic electron scattering at planar alignment in a thin Si crystal

Y. Takabayashi, Yu L. Pivovarov, T. A. Tukhfatullin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Experiments on 255-MeV electron scattering under (220) planar channeling conditions in a Si crystal were carried out at the linac of the SAGA Light Source. The spatial and angular distributions of electrons penetrating through a 20-μm thick Si crystal at different incident angles with respect to the (220) plane were measured, and features characteristic of the planar alignment were identified. The experimental results were compared with computer simulations, and showed a reasonable agreement. A comparison with doughnut scattering at axial channeling in the same crystal was also performed. It was confirmed that the planar alignment effect is weaker than the axial alignment effect. These studies are important for understanding the basic mechanism of electron scattering and radiation processes in a crystal.

Original languageEnglish
Pages (from-to)1520-1525
Number of pages6
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume378
Issue number21
DOIs
Publication statusPublished - 11 Apr 2014

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electron scattering
alignment
crystals
electron radiation
spatial distribution
light sources
angular distribution
computerized simulation
scattering
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Studies of relativistic electron scattering at planar alignment in a thin Si crystal. / Takabayashi, Y.; Pivovarov, Yu L.; Tukhfatullin, T. A.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 378, No. 21, 11.04.2014, p. 1520-1525.

Research output: Contribution to journalArticle

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