Abstract
The Zr-Si-N films were deposited using an unbalanced dc reactive magnetron sputtering of the alloyed ZrSi2 target in a mixture of argon and nitrogen onto steel and silicon substrates. This article reports on a systematic investigation of dependences of the structure, elemental composition, mechanical properties and oxidation resistance of Zr-Si-N films with a high (≥25 at.%) Si content on the partial pressure of nitrogen pN2, magnetron discharge current Id, total sputtering gas pressure p T, substrate temperature Ts and dc and pulsed substrate bias Us. It was demonstrated that (i) ZrSi2 films sputtered in (a) a pure argon (pN2=0) and (b) Zr-Si-N films sputtered at very low values of pN2≤0.03 Pa are crystalline, electrically conductive, optically opaque and exhibit a relatively high value of the microhardness H≈17-20 GPa; (ii) Zr-Si-N films sputtered at p N2≥0.1 Pa are X-ray amorphous, electrically insulating, optically transparent and exhibit (a) a high microhardness H of about 30 GPa and (b) a low compressive macrostress σ of about -1.2 GPa; (iii) an increase in the substrate temperature Ts from 300 to 750 °C has no effect on the structure and H of as-deposited films; the structure of the Zr-Si-N film sputtered at Ts=750 °C remains X-ray amorphous and its hardness H does not decrease with increasing Ts, i.e. it is approximately the same (≈30 GPa) as that of the film sputtered at Ts=500 °C; (iv) the Zr-Si-N films with high (≥25 at.%) Si content and high H≈30 GPa can be produced in the metallic mode of sputtering, i.e. they can be produced approximately four times faster than the binary nitrides such as, for instance, the TiN films; and (v) the Zr-Si-N films with a high (≥55 vol. %) content of the a-Si3N4 phase, composed of a mixture of a-Si 3N4+ZrNx>1 phases, exhibit a high oxidation resistance in flowing air, greater than 1300 °C.
| Original language | English |
|---|---|
| Pages (from-to) | 238-247 |
| Number of pages | 10 |
| Journal | Thin Solid Films |
| Volume | 478 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 1 May 2005 |
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Keywords
- DC reactive magnetron sputtering
- High (≥25 at.%) Si content
- Mechanical properties
- Oxidation resistance
- Structure
- Zr-Si-N films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Structure and properties of magnetron sputtered Zr-Si-N films with a high (≥25 at.%) Si content. / Musil, J.; Daniel, R.; Zeman, P.; Takai, O.
In: Thin Solid Films, Vol. 478, No. 1-2, 01.05.2005, p. 238-247.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Structure and properties of magnetron sputtered Zr-Si-N films with a high (≥25 at.%) Si content
AU - Musil, J.
AU - Daniel, R.
AU - Zeman, P.
AU - Takai, O.
PY - 2005/5/1
Y1 - 2005/5/1
N2 - The Zr-Si-N films were deposited using an unbalanced dc reactive magnetron sputtering of the alloyed ZrSi2 target in a mixture of argon and nitrogen onto steel and silicon substrates. This article reports on a systematic investigation of dependences of the structure, elemental composition, mechanical properties and oxidation resistance of Zr-Si-N films with a high (≥25 at.%) Si content on the partial pressure of nitrogen pN2, magnetron discharge current Id, total sputtering gas pressure p T, substrate temperature Ts and dc and pulsed substrate bias Us. It was demonstrated that (i) ZrSi2 films sputtered in (a) a pure argon (pN2=0) and (b) Zr-Si-N films sputtered at very low values of pN2≤0.03 Pa are crystalline, electrically conductive, optically opaque and exhibit a relatively high value of the microhardness H≈17-20 GPa; (ii) Zr-Si-N films sputtered at p N2≥0.1 Pa are X-ray amorphous, electrically insulating, optically transparent and exhibit (a) a high microhardness H of about 30 GPa and (b) a low compressive macrostress σ of about -1.2 GPa; (iii) an increase in the substrate temperature Ts from 300 to 750 °C has no effect on the structure and H of as-deposited films; the structure of the Zr-Si-N film sputtered at Ts=750 °C remains X-ray amorphous and its hardness H does not decrease with increasing Ts, i.e. it is approximately the same (≈30 GPa) as that of the film sputtered at Ts=500 °C; (iv) the Zr-Si-N films with high (≥25 at.%) Si content and high H≈30 GPa can be produced in the metallic mode of sputtering, i.e. they can be produced approximately four times faster than the binary nitrides such as, for instance, the TiN films; and (v) the Zr-Si-N films with a high (≥55 vol. %) content of the a-Si3N4 phase, composed of a mixture of a-Si 3N4+ZrNx>1 phases, exhibit a high oxidation resistance in flowing air, greater than 1300 °C.
AB - The Zr-Si-N films were deposited using an unbalanced dc reactive magnetron sputtering of the alloyed ZrSi2 target in a mixture of argon and nitrogen onto steel and silicon substrates. This article reports on a systematic investigation of dependences of the structure, elemental composition, mechanical properties and oxidation resistance of Zr-Si-N films with a high (≥25 at.%) Si content on the partial pressure of nitrogen pN2, magnetron discharge current Id, total sputtering gas pressure p T, substrate temperature Ts and dc and pulsed substrate bias Us. It was demonstrated that (i) ZrSi2 films sputtered in (a) a pure argon (pN2=0) and (b) Zr-Si-N films sputtered at very low values of pN2≤0.03 Pa are crystalline, electrically conductive, optically opaque and exhibit a relatively high value of the microhardness H≈17-20 GPa; (ii) Zr-Si-N films sputtered at p N2≥0.1 Pa are X-ray amorphous, electrically insulating, optically transparent and exhibit (a) a high microhardness H of about 30 GPa and (b) a low compressive macrostress σ of about -1.2 GPa; (iii) an increase in the substrate temperature Ts from 300 to 750 °C has no effect on the structure and H of as-deposited films; the structure of the Zr-Si-N film sputtered at Ts=750 °C remains X-ray amorphous and its hardness H does not decrease with increasing Ts, i.e. it is approximately the same (≈30 GPa) as that of the film sputtered at Ts=500 °C; (iv) the Zr-Si-N films with high (≥25 at.%) Si content and high H≈30 GPa can be produced in the metallic mode of sputtering, i.e. they can be produced approximately four times faster than the binary nitrides such as, for instance, the TiN films; and (v) the Zr-Si-N films with a high (≥55 vol. %) content of the a-Si3N4 phase, composed of a mixture of a-Si 3N4+ZrNx>1 phases, exhibit a high oxidation resistance in flowing air, greater than 1300 °C.
KW - DC reactive magnetron sputtering
KW - High (≥25 at.%) Si content
KW - Mechanical properties
KW - Oxidation resistance
KW - Structure
KW - Zr-Si-N films
UR - http://www.scopus.com/inward/record.url?scp=14644394301&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=14644394301&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.11.190
DO - 10.1016/j.tsf.2004.11.190
M3 - Article
AN - SCOPUS:14644394301
VL - 478
SP - 238
EP - 247
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -