Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions

V. V. Uglov, V. I. Shymanski, E. L. Korenevski, G. E. Remnev, N. T. Kvasov

Research output: Contribution to journalArticle

Abstract

Abstract: The results of investigating the microstructure and phase composition of AlN/SiN x multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiN x ) phases, which were formed via magnetron sputtering, are presented. The layer thickness varies from 2 to 10 nm, the total film thickness is 300 nm, and the grain size of the AlN phase corresponds to the nc-AlN layer thickness. By means of transmission electron microscopy, it is revealed that, due to 30-keV He + ion irradiation with a dose of 5 × 10 16 cm –2 , gas pores with an average size of 2.0–2.4 nm and localized mainly in a-SiN x layers are generated within the projective range of helium ions. The appearance of such inclusions is due to the fact that implanted helium atoms migrate into the formed vacancy complexes. In this case, the structural state of AlN crystal layers remains unchanged.

Original languageEnglish
Pages (from-to)1165-1169
Number of pages5
JournalJournal of Surface Investigation
Volume12
Issue number6
DOIs
Publication statusPublished - 1 Nov 2018

Fingerprint

Helium
Aluminum nitride
Phase composition
Multilayers
Ions
Multilayer films
Ion bombardment
Amorphous silicon
Silicon nitride
Magnetron sputtering
Dosimetry
Vacancies
Film thickness
Gases
Transmission electron microscopy
Atoms
Crystals
Microstructure
aluminum nitride
silicon nitride

Keywords

  • aluminum nitride
  • amorphous layers
  • helium-ion implantation
  • multilayer films
  • pore formation
  • radiation-induced defects
  • silicon nitride

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions. / Uglov, V. V.; Shymanski, V. I.; Korenevski, E. L.; Remnev, G. E.; Kvasov, N. T.

In: Journal of Surface Investigation, Vol. 12, No. 6, 01.11.2018, p. 1165-1169.

Research output: Contribution to journalArticle

Uglov, V. V. ; Shymanski, V. I. ; Korenevski, E. L. ; Remnev, G. E. ; Kvasov, N. T. / Structure and Phase Composition of Multilayer AlN/SiN Films Irradiated with Helium Ions. In: Journal of Surface Investigation. 2018 ; Vol. 12, No. 6. pp. 1165-1169.
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AU - Remnev, G. E.

AU - Kvasov, N. T.

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N2 - Abstract: The results of investigating the microstructure and phase composition of AlN/SiN x multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiN x ) phases, which were formed via magnetron sputtering, are presented. The layer thickness varies from 2 to 10 nm, the total film thickness is 300 nm, and the grain size of the AlN phase corresponds to the nc-AlN layer thickness. By means of transmission electron microscopy, it is revealed that, due to 30-keV He + ion irradiation with a dose of 5 × 10 16 cm –2 , gas pores with an average size of 2.0–2.4 nm and localized mainly in a-SiN x layers are generated within the projective range of helium ions. The appearance of such inclusions is due to the fact that implanted helium atoms migrate into the formed vacancy complexes. In this case, the structural state of AlN crystal layers remains unchanged.

AB - Abstract: The results of investigating the microstructure and phase composition of AlN/SiN x multilayer films with alternating nanocrystalline aluminum nitride (nc-AlN) and amorphous silicon nitride (a-SiN x ) phases, which were formed via magnetron sputtering, are presented. The layer thickness varies from 2 to 10 nm, the total film thickness is 300 nm, and the grain size of the AlN phase corresponds to the nc-AlN layer thickness. By means of transmission electron microscopy, it is revealed that, due to 30-keV He + ion irradiation with a dose of 5 × 10 16 cm –2 , gas pores with an average size of 2.0–2.4 nm and localized mainly in a-SiN x layers are generated within the projective range of helium ions. The appearance of such inclusions is due to the fact that implanted helium atoms migrate into the formed vacancy complexes. In this case, the structural state of AlN crystal layers remains unchanged.

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