Abstract
The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.
| Original language | English |
|---|---|
| Pages (from-to) | 67-72 |
| Number of pages | 6 |
| Journal | Journal of Surface Investigation |
| Volume | 6 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Feb 2012 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
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Structure and phase composition of a chromium-silicon system modified by high-current electron beams. / Uglov, Vladimir Vasilevich; Kvasov, N. T.; Petukhov, Yu A.; Koval', N. N.; Ivanov, Yu F.; Teresov, A. D.
In: Journal of Surface Investigation, Vol. 6, No. 1, 01.02.2012, p. 67-72.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Structure and phase composition of a chromium-silicon system modified by high-current electron beams
AU - Uglov, Vladimir Vasilevich
AU - Kvasov, N. T.
AU - Petukhov, Yu A.
AU - Koval', N. N.
AU - Ivanov, Yu F.
AU - Teresov, A. D.
PY - 2012/2/1
Y1 - 2012/2/1
N2 - The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.
AB - The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.
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U2 - 10.1134/S1027451012010193
DO - 10.1134/S1027451012010193
M3 - Article
VL - 6
SP - 67
EP - 72
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 1
ER -