Structure and phase composition of a chromium-silicon system modified by high-current electron beams

Vladimir Vasilevich Uglov, N. T. Kvasov, Yu A. Petukhov, N. N. Koval', Yu F. Ivanov, A. D. Teresov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.

Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalJournal of Surface Investigation
Volume6
Issue number1
DOIs
Publication statusPublished - 1 Feb 2012

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Chromium
Silicon
Phase composition
Electron beams
Microanalysis
Phase structure
Eutectics
Electron microscopy
Extrusion
Mass transfer
Phase transitions
X rays
Substrates
Temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

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Structure and phase composition of a chromium-silicon system modified by high-current electron beams. / Uglov, Vladimir Vasilevich; Kvasov, N. T.; Petukhov, Yu A.; Koval', N. N.; Ivanov, Yu F.; Teresov, A. D.

In: Journal of Surface Investigation, Vol. 6, No. 1, 01.02.2012, p. 67-72.

Research output: Contribution to journalArticle

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