Structure and phase composition of a chromium-silicon system modified by high-current electron beams

Abstract

The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm ², are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi ₂, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Journal of Surface Investigation
Volume	6
Issue number	1
DOIs	https://doi.org/10.1134/S1027451012010193
Publication status	Published - 1 Feb 2012

ASJC Scopus subject areas

Surfaces, Coatings and Films

Access to Document

10.1134/S1027451012010193

Fingerprint Dive into the research topics of 'Structure and phase composition of a chromium-silicon system modified by high-current electron beams'. Together they form a unique fingerprint.

Cite this

@article{e62af60fefad47379d5a2ca69b3ba908,

title = "Structure and phase composition of a chromium-silicon system modified by high-current electron beams",

abstract = "The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.",

author = "Uglov, {Vladimir Vasilevich} and Kvasov, {N. T.} and Petukhov, {Yu A.} and Koval', {N. N.} and Ivanov, {Yu F.} and Teresov, {A. D.}",

year = "2012",

month = feb,

day = "1",

doi = "10.1134/S1027451012010193",

language = "English",

volume = "6",

pages = "67--72",

journal = "Journal of Surface Investigation",

issn = "1027-4510",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "1",

}

TY - JOUR

T1 - Structure and phase composition of a chromium-silicon system modified by high-current electron beams

AU - Uglov, Vladimir Vasilevich

AU - Kvasov, N. T.

AU - Petukhov, Yu A.

AU - Koval', N. N.

AU - Ivanov, Yu F.

AU - Teresov, A. D.

PY - 2012/2/1

Y1 - 2012/2/1

N2 - The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.

AB - The results of studies of the structure-phase state of a chromium-coated silicon substrate system's subsurface layer treated with low-energy high-current electron beams, 50-200 μs in duration and with an energy density of 15 J/cm 2, are reported. The data of raster electron microscopy and X-ray structural and spectral microanalysis revealed the formation of a chromium-doped silicon layer with a thickness of 2-38 μm, chromium-enriched silicon dendrites, chromium disilicide CrSi 2, and an amorphous eutectic layer (the characteristic cross-section size of the chromium-enriched phase extrusions is ~50 nm). The structure-phase transformations are discussed taking into account the peculiarities of the distribution of temperature, diffusion and convective mass-transfer in the modified layer.

UR - http://www.scopus.com/inward/record.url?scp=84857342091&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84857342091&partnerID=8YFLogxK

U2 - 10.1134/S1027451012010193

DO - 10.1134/S1027451012010193

M3 - Article

AN - SCOPUS:84857342091

VL - 6

SP - 67

EP - 72

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 1

ER -

Structure and phase composition of a chromium-silicon system modified by high-current electron beams

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this