The bound motion of fast electrons relative to the atomic axes of silicon and gold single crystals is considered in the quantum-mechanical approximation. The role of strongly interacting bound states in Rutherford scattering, emission, and transport of electrons in channeling is discussed for the first time. The angular dependences of the formation of such states when an electron beam is incident on the crystal are calculated and compared with experimental results. Angular distributions of electrons behind left angle bracket 111 right angle bracket silicon single crystals are calculated for strongly interacting and strongly penetrating bound states, and the dependence on the single-crystal thickness is discussed for the experimental angular distributions.
|Title of host publication||Sov Phys Solid State|
|Number of pages||5|
|Publication status||Published - Jul 1977|
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