Stability of the GaAs based Hall sensors irradiated by gamma quanta

A. V. Gradoboev, G. F. Karlova

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The present work is aimed at investigation of the stability of the GaAsbased Hall sensors (pickups) to irradiation by gamma quanta. The examined objects are the gallium arsenide based Hall sensors manufactured on thin active layers by the methods of vaporphase epitaxy (VPE), molecular beam epitaxy, and ion implantation. Our research methodology involves measurements of the volt-ampere characteristics (VACs) of all sensors for different values of the supply voltage polarity and electron concentration and mobility by the Van-der- Pau method as well as investigations of the noise properties of the sensors before and after irradiation. The sensors are irradiated by gamma quanta of Co<sup>60</sup> at room temperature in the passive mode, that is, without imposition of an electrical bias. As a result of investigations, it is established that a part of the active layer of finite thickness adjoining the substrate plays an important role in the charge carrier transmission process depending on the concentration of deep-level centers in the substrate. Irradiation by high doses leads to degradation of VACs and increase in the spectral density of the sensor noise. Low gamma radiation doses have a stabilization effect on the sensors. Periodic relaxation processes are observed for a part of the structures manufactured by the VPE method. The assumption is made that they can be caused by the deep-level centersin GaAs.

Original languageEnglish
Title of host publicationIOP Conference Series: Materials Science and Engineering
PublisherInstitute of Physics Publishing
Volume81
Edition1
DOIs
Publication statusPublished - 23 Apr 2015
EventInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 - Tomsk, Russian Federation
Duration: 3 Nov 20148 Nov 2014

Other

OtherInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014
CountryRussian Federation
CityTomsk
Period3.11.148.11.14

Fingerprint

Sensors
Irradiation
Epitaxial growth
Dosimetry
Gallium arsenide
Spectral density
Pickups
Relaxation processes
Substrates
gallium arsenide
Charge carriers
Molecular beam epitaxy
Ion implantation
Gamma rays
Stabilization
Degradation
Electrons
Electric potential
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Gradoboev, A. V., & Karlova, G. F. (2015). Stability of the GaAs based Hall sensors irradiated by gamma quanta. In IOP Conference Series: Materials Science and Engineering (1 ed., Vol. 81). [012027] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/81/1/012027

Stability of the GaAs based Hall sensors irradiated by gamma quanta. / Gradoboev, A. V.; Karlova, G. F.

IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015. 012027.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gradoboev, AV & Karlova, GF 2015, Stability of the GaAs based Hall sensors irradiated by gamma quanta. in IOP Conference Series: Materials Science and Engineering. 1 edn, vol. 81, 012027, Institute of Physics Publishing, International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014, Tomsk, Russian Federation, 3.11.14. https://doi.org/10.1088/1757-899X/81/1/012027
Gradoboev AV, Karlova GF. Stability of the GaAs based Hall sensors irradiated by gamma quanta. In IOP Conference Series: Materials Science and Engineering. 1 ed. Vol. 81. Institute of Physics Publishing. 2015. 012027 https://doi.org/10.1088/1757-899X/81/1/012027
Gradoboev, A. V. ; Karlova, G. F. / Stability of the GaAs based Hall sensors irradiated by gamma quanta. IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015.
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