Sputtering of the magnetron diode target in the presence of an external ion beam

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The effect of an external ion beam on the plasma and target of a de magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.

Original languageEnglish
Pages (from-to)453-458
Number of pages6
JournalTechnical Physics
Issue number4
Publication statusPublished - Apr 2006


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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