Sputtering of the magnetron diode target in the presence of an external ion beam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effect of an external ion beam on the plasma and target of a de magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.

Original languageEnglish
Pages (from-to)453-458
Number of pages6
JournalTechnical Physics
Volume51
Issue number4
DOIs
Publication statusPublished - Apr 2006

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sputtering
ion beams
diodes
Hall currents
ion sources
magnetron sputtering
education
etching
ionization
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sputtering of the magnetron diode target in the presence of an external ion beam. / Zhukov, V. V.; Krivobokov, V. P.; Yanin, Sergey Nikolaevich.

In: Technical Physics, Vol. 51, No. 4, 04.2006, p. 453-458.

Research output: Contribution to journalArticle

@article{0861113f1a49408ea2ada0dea166e314,
title = "Sputtering of the magnetron diode target in the presence of an external ion beam",
abstract = "The effect of an external ion beam on the plasma and target of a de magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.",
author = "Zhukov, {V. V.} and Krivobokov, {V. P.} and Sergey Nikolaevich Yanin",
year = "2006",
month = "4",
doi = "10.1134/S1063784206040098",
language = "English",
volume = "51",
pages = "453--458",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "4",

}

TY - JOUR

T1 - Sputtering of the magnetron diode target in the presence of an external ion beam

AU - Zhukov, V. V.

AU - Krivobokov, V. P.

AU - Yanin, Sergey Nikolaevich

PY - 2006/4

Y1 - 2006/4

N2 - The effect of an external ion beam on the plasma and target of a de magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.

AB - The effect of an external ion beam on the plasma and target of a de magnetron sputtering system in the course of reactive deposition of films is investigated. A combined experimental setup consisting of a magnetron diode and a hall-current ion source is constructed. The influence of a fast ion beam on the discharge current formation, the target emission characteristics, and the target etching rate is considered. It is shown that the ion assistance expands the operating range of the magnetron diode, increases the deposition rate, and substantially shortens the target training time. At the same time, it practically does not affect the ionization processes in the plasma.

UR - http://www.scopus.com/inward/record.url?scp=33646171885&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646171885&partnerID=8YFLogxK

U2 - 10.1134/S1063784206040098

DO - 10.1134/S1063784206040098

M3 - Article

VL - 51

SP - 453

EP - 458

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 4

ER -