Abstract
The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.
| Original language | English |
|---|---|
| Pages (from-to) | 118-121 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 89 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 1 Mar 2013 |
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Keywords
- Amorphization
- Carbon implantation
- High intensity ion implantation
- Nanodiamonds
- Raman spectroscopy
- Silicon
- SIMS depth profile analysis
ASJC Scopus subject areas
- Instrumentation
- Condensed Matter Physics
- Surfaces, Coatings and Films
Cite this
Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams. / Remnev, G. E.; Uglov, Vladimir Vasilevich; Shymanski, V. I.; Konarski, P.; Samtsov, M. P.; Pavlov, Sergey Khonstantinovich; Lapchuk, N. M.
In: Vacuum, Vol. 89, No. 1, 01.03.2013, p. 118-121.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams
AU - Remnev, G. E.
AU - Uglov, Vladimir Vasilevich
AU - Shymanski, V. I.
AU - Konarski, P.
AU - Samtsov, M. P.
AU - Pavlov, Sergey Khonstantinovich
AU - Lapchuk, N. M.
PY - 2013/3/1
Y1 - 2013/3/1
N2 - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.
AB - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.
KW - Amorphization
KW - Carbon implantation
KW - High intensity ion implantation
KW - Nanodiamonds
KW - Raman spectroscopy
KW - Silicon
KW - SIMS depth profile analysis
UR - http://www.scopus.com/inward/record.url?scp=84869083976&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869083976&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2012.02.037
DO - 10.1016/j.vacuum.2012.02.037
M3 - Article
AN - SCOPUS:84869083976
VL - 89
SP - 118
EP - 121
JO - Vacuum
JF - Vacuum
SN - 0042-207X
IS - 1
ER -