Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

Abstract

The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm ²) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm ²). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

Original language	English
Pages (from-to)	118-121
Number of pages	4
Journal	Vacuum
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.vacuum.2012.02.037
Publication status	Published - 1 Mar 2013

Keywords

Amorphization
Carbon implantation
High intensity ion implantation
Nanodiamonds
Raman spectroscopy
Silicon
SIMS depth profile analysis

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

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10.1016/j.vacuum.2012.02.037

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@article{39dea10a093c455abfc7ecb86a1db4dc,

title = "Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams",

abstract = "The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.",

keywords = "Amorphization, Carbon implantation, High intensity ion implantation, Nanodiamonds, Raman spectroscopy, Silicon, SIMS depth profile analysis",

author = "Remnev, {G. E.} and Uglov, {Vladimir Vasilevich} and Shymanski, {V. I.} and P. Konarski and Samtsov, {M. P.} and Pavlov, {Sergey Khonstantinovich} and Lapchuk, {N. M.}",

year = "2013",

month = mar,

day = "1",

doi = "10.1016/j.vacuum.2012.02.037",

language = "English",

volume = "89",

pages = "118--121",

journal = "Vacuum",

issn = "0042-207X",

publisher = "Elsevier Limited",

number = "1",

}

TY - JOUR

T1 - Spectral analysis of nanosize forms of carbon synthesized by pulsed intense ion beams

AU - Remnev, G. E.

AU - Uglov, Vladimir Vasilevich

AU - Shymanski, V. I.

AU - Konarski, P.

AU - Samtsov, M. P.

AU - Pavlov, Sergey Khonstantinovich

AU - Lapchuk, N. M.

PY - 2013/3/1

Y1 - 2013/3/1

N2 - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

AB - The research results of nanodiamond formation in silicon during high intense ion implantation are presented. To produce a near-surface layer containing nanodiamond clusters a pulse ion implantation of carbon ions with different ion current densities (25-100cA/cm 2) and pulse numbers (10-500) was used. According to the Raman spectroscopy and electron paramagnetic resonance data the optimal parameters of ion implantation resulting in nanodiamond formation were found. Nanodiamonds are formed in the internal layer due to ion implantation with low pulse number (less than 100) and high ion current density (70-80 A/cm 2). An increase in pulse number results in amorphization of the implanted layer due to hydrogen atom accumulation that was revealed by the secondary ion mass-spectroscopy (SIMS) method.

KW - Amorphization

KW - Carbon implantation

KW - High intensity ion implantation

KW - Nanodiamonds

KW - Raman spectroscopy

KW - Silicon

KW - SIMS depth profile analysis

UR - http://www.scopus.com/inward/record.url?scp=84869083976&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869083976&partnerID=8YFLogxK

U2 - 10.1016/j.vacuum.2012.02.037

DO - 10.1016/j.vacuum.2012.02.037

M3 - Article

AN - SCOPUS:84869083976

VL - 89

SP - 118

EP - 121

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 1