Abstract
It is shown that a noticeable role in the electron beam charge neutralization in the course of electron-beam sintering of compacted silicon carbide samples is played, as the sample temperature increases, by the electrical conductivity of a sample being sintered, as well as by thermionic emission from its surface. Experimental results obtained for compacted silicon carbide are used to determine its energy gap width and the electron work function.
| Original language | English |
|---|---|
| Pages (from-to) | 747-749 |
| Number of pages | 3 |
| Journal | Technical Physics Letters |
| Volume | 41 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 4 Aug 2015 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Klimov, A. S., Burdovitsin, V. A., Zenin, A. A., Oks, E. M., Khasanov, O. L., Dvilis, E. S., & Khasanov, A. O. (2015). Specific features of the charge neutralization of silicon carbide in sintering by electron beam in the forevacuum range of pressures. Technical Physics Letters, 41(8), 747-749. https://doi.org/10.1134/S1063785015080118