Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory

N. K. Morozova, N. D. Danilevich, V. M. Semenov, V. G. Galstyan, V. I. Oleshko, Svetlana Sergeevna Vil'chinskaya, V. M. Lisitsyn

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025-1026 cm-3 s-1) is clarified. It is shown that the alloys containing oxygen dissolved in II-VI crystals represent heterogeneous systems with oxygen segregating in the crystal matrix.

Original languageEnglish
Pages (from-to)1628-1634
Number of pages7
JournalSemiconductors
Volume43
Issue number13
DOIs
Publication statusPublished - 1 Dec 2009

Fingerprint

Luminescence
luminescence
Crystals
crystals
oxygen
Dissolved oxygen
Oxygen
matrices
excitation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory. / Morozova, N. K.; Danilevich, N. D.; Semenov, V. M.; Galstyan, V. G.; Oleshko, V. I.; Vil'chinskaya, Svetlana Sergeevna; Lisitsyn, V. M.

In: Semiconductors, Vol. 43, No. 13, 01.12.2009, p. 1628-1634.

Research output: Contribution to journalArticle

@article{d50c9a8d5ea64134ab75b405205d79ee,
title = "Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory",
abstract = "The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025-1026 cm-3 s-1) is clarified. It is shown that the alloys containing oxygen dissolved in II-VI crystals represent heterogeneous systems with oxygen segregating in the crystal matrix.",
author = "Morozova, {N. K.} and Danilevich, {N. D.} and Semenov, {V. M.} and Galstyan, {V. G.} and Oleshko, {V. I.} and Vil'chinskaya, {Svetlana Sergeevna} and Lisitsyn, {V. M.}",
year = "2009",
month = "12",
day = "1",
doi = "10.1134/S1063782609130028",
language = "English",
volume = "43",
pages = "1628--1634",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "13",

}

TY - JOUR

T1 - Some specific features of edge luminescence of CdS(O) in the context of the Band's Anticrossing theory

AU - Morozova, N. K.

AU - Danilevich, N. D.

AU - Semenov, V. M.

AU - Galstyan, V. G.

AU - Oleshko, V. I.

AU - Vil'chinskaya, Svetlana Sergeevna

AU - Lisitsyn, V. M.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025-1026 cm-3 s-1) is clarified. It is shown that the alloys containing oxygen dissolved in II-VI crystals represent heterogeneous systems with oxygen segregating in the crystal matrix.

AB - The nature of luminescence bands prevailing in the near-edge spectrum of the CdS(O) crystals at high excitation intensities (1025-1026 cm-3 s-1) is clarified. It is shown that the alloys containing oxygen dissolved in II-VI crystals represent heterogeneous systems with oxygen segregating in the crystal matrix.

UR - http://www.scopus.com/inward/record.url?scp=74549217881&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74549217881&partnerID=8YFLogxK

U2 - 10.1134/S1063782609130028

DO - 10.1134/S1063782609130028

M3 - Article

VL - 43

SP - 1628

EP - 1634

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 13

ER -