The effect of electrochemically activated solutions of sulfuric acid on the state of the real surface of technological silicon plates is studied. It is shown that the most intense change in the zone of surface states occurs for the first 10 min of the interaction. The authors believe that the treatment of the silicon surface by chemically activated solutions of sulfuric acid results in chemical modification of the real surface, but not in deep cleaning.
|Number of pages||6|
|Journal||Surface Investigation X-Ray, Synchrotron and Neutron Techniques|
|Publication status||Published - 1997|
ASJC Scopus subject areas
- Surfaces and Interfaces