Some growth peculiarities of a-C:H films in ECR microwave plasma

V. Kulikovsky, L. Shaginyan, L. Jastrabik, L. Soukup, P. Bohac, J. Musil

Research output: Contribution to journalReview article

3 Citations (Scopus)

Abstract

The chemical vapor deposition (CVD) process of a-C:H films from methane and argon gas mixtures in an electron cyclotron resonance (ECR) microwave plasma has been studied. The formation of a-C:H films in a wide range of basic parameters has been investigated. The basic parameters are the following: the total pressure of the working gas mixture, the composition of the gas mixture, the magnitude of microwave power absorbed in a plasma, the location of the substrate LECR-S with respect to the position of ECR and substrate material (Si, ceramic). We found that extremely low or zero growth rate of the a-C:H films takes place in the cases when (i) the substrate is placed in the ECR plane or its close vicinity and (ii) a high microwave power is used; the latter situation occurs when the power is about 300 W or greater. The increase in deposition rate takes place under the increase of the LECR-S distance or under the decrease of the microwave power. The deposition rate of a-C:H films on the ceramic substrate was higher than that on the silicon substrate for all values of operating pressure. These peculiarities are explained in terms of additional heating of Si substrates by microwave power absorption outside the ECR region. A later (latent) parameter should be taken into account in the analysis of the deposition process and choice of the substrate material. The mechanism leading to a very high growth rate of a-C:H polymer-like films is discussed.

Original languageEnglish
Pages (from-to)315-323
Number of pages9
JournalVacuum
Volume60
Issue number3
Publication statusPublished - 1 Dec 2000

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Microwaves
Plasmas
microwaves
Substrates
Gas mixtures
gas mixtures
Deposition rates
ceramics
Argon
Methane
Silicon
Chemical vapor deposition
Polymers
methane
argon
vapor deposition
Heating
heating

Keywords

  • a-C:H polymer-like films
  • CVD
  • ECR microwave plasma

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Kulikovsky, V., Shaginyan, L., Jastrabik, L., Soukup, L., Bohac, P., & Musil, J. (2000). Some growth peculiarities of a-C:H films in ECR microwave plasma. Vacuum, 60(3), 315-323.

Some growth peculiarities of a-C:H films in ECR microwave plasma. / Kulikovsky, V.; Shaginyan, L.; Jastrabik, L.; Soukup, L.; Bohac, P.; Musil, J.

In: Vacuum, Vol. 60, No. 3, 01.12.2000, p. 315-323.

Research output: Contribution to journalReview article

Kulikovsky, V, Shaginyan, L, Jastrabik, L, Soukup, L, Bohac, P & Musil, J 2000, 'Some growth peculiarities of a-C:H films in ECR microwave plasma', Vacuum, vol. 60, no. 3, pp. 315-323.
Kulikovsky V, Shaginyan L, Jastrabik L, Soukup L, Bohac P, Musil J. Some growth peculiarities of a-C:H films in ECR microwave plasma. Vacuum. 2000 Dec 1;60(3):315-323.
Kulikovsky, V. ; Shaginyan, L. ; Jastrabik, L. ; Soukup, L. ; Bohac, P. ; Musil, J. / Some growth peculiarities of a-C:H films in ECR microwave plasma. In: Vacuum. 2000 ; Vol. 60, No. 3. pp. 315-323.
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