Abstract
Typical modulators for magnetrons are based usually on the lamp or thyratron switches. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6÷6 μs pulse length and frequency up to 2 kHz.
Original language | English |
---|---|
Title of host publication | Digest of Technical Papers-IEEE International Pulsed Power Conference |
Editors | M. Giesselmann, A. Neuber |
Pages | 1462-1464 |
Number of pages | 3 |
Publication status | Published - 2003 |
Event | 14th IEEE International Pulsed Power Conference - Dallas, TX, United States Duration: 15 Jun 2003 → 18 Jun 2003 |
Other
Other | 14th IEEE International Pulsed Power Conference |
---|---|
Country | United States |
City | Dallas, TX |
Period | 15.6.03 → 18.6.03 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering