Solid state power supply modulator system for magnetron

V. A. Vizir', S. N. Ivanov, B. M. Kovalchuk, V. I. Manilov, N. G. Shubkin, V. V. Chervyakov, V. V. Yuriev, L. D. Butakov, V. I. Tolmacev

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Typical modulators for magnetrons are based usually on the lamp or thyratron switches. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6÷6 μs pulse length and frequency up to 2 kHz.

    Original languageEnglish
    Title of host publicationDigest of Technical Papers-IEEE International Pulsed Power Conference
    EditorsM. Giesselmann, A. Neuber
    Pages1462-1464
    Number of pages3
    Publication statusPublished - 2003
    Event14th IEEE International Pulsed Power Conference - Dallas, TX, United States
    Duration: 15 Jun 200318 Jun 2003

    Other

    Other14th IEEE International Pulsed Power Conference
    CountryUnited States
    CityDallas, TX
    Period15.6.0318.6.03

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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