Solid state power supply modulator system for magnetron

Abstract

Typical modulators for magnetrons are based usually on the lamp or thyratron switches. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6÷6 μs pulse length and frequency up to 2 kHz.

Original language	English
Title of host publication	Digest of Technical Papers-IEEE International Pulsed Power Conference
Editors	M. Giesselmann, A. Neuber
Pages	1462-1464
Number of pages	3
Publication status	Published - 2003
Event	14th IEEE International Pulsed Power Conference - Dallas, TX, United States Duration: 15 Jun 2003 → 18 Jun 2003

Other

Other	14th IEEE International Pulsed Power Conference
Country	United States
City	Dallas, TX
Period	15.6.03 → 18.6.03

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Vizir', V. A., Ivanov, S. N., Kovalchuk, B. M., Manilov, V. I., Shubkin, N. G., Chervyakov, V. V., Yuriev, V. V., Butakov, L. D., & Tolmacev, V. I. (2003). Solid state power supply modulator system for magnetron. In M. Giesselmann, & A. Neuber (Eds.), Digest of Technical Papers-IEEE International Pulsed Power Conference (pp. 1462-1464)

Solid state power supply modulator system for magnetron. / Vizir', V. A.; Ivanov, S. N.; Kovalchuk, B. M.; Manilov, V. I.; Shubkin, N. G.; Chervyakov, V. V.; Yuriev, V. V.; Butakov, L. D.; Tolmacev, V. I.

Digest of Technical Papers-IEEE International Pulsed Power Conference. ed. / M. Giesselmann; A. Neuber. 2003. p. 1462-1464.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Vizir', VA, Ivanov, SN, Kovalchuk, BM, Manilov, VI, Shubkin, NG, Chervyakov, VV, Yuriev, VV, Butakov, LD & Tolmacev, VI 2003, Solid state power supply modulator system for magnetron. in M Giesselmann & A Neuber (eds), Digest of Technical Papers-IEEE International Pulsed Power Conference. pp. 1462-1464, 14th IEEE International Pulsed Power Conference, Dallas, TX, United States, 15.6.03.

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title = "Solid state power supply modulator system for magnetron",

abstract = "Typical modulators for magnetrons are based usually on the lamp or thyratron switches. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6÷6 μs pulse length and frequency up to 2 kHz.",

author = "Vizir', {V. A.} and Ivanov, {S. N.} and Kovalchuk, {B. M.} and Manilov, {V. I.} and Shubkin, {N. G.} and Chervyakov, {V. V.} and Yuriev, {V. V.} and Butakov, {L. D.} and Tolmacev, {V. I.}",

year = "2003",

language = "English",

pages = "1462--1464",

editor = "M. Giesselmann and A. Neuber",

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note = "14th IEEE International Pulsed Power Conference ; Conference date: 15-06-2003 Through 18-06-2003",

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AU - Vizir', V. A.

AU - Ivanov, S. N.

AU - Kovalchuk, B. M.

AU - Manilov, V. I.

AU - Shubkin, N. G.

AU - Chervyakov, V. V.

AU - Yuriev, V. V.

AU - Butakov, L. D.

AU - Tolmacev, V. I.

PY - 2003

Y1 - 2003

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AB - Typical modulators for magnetrons are based usually on the lamp or thyratron switches. Now powerful and reliable solid state switches are available, which can compete with lamps and thyratrons in power and switching time, but its lifetime is much longer. The MOSFET and IGBT transistors are examples of such switches. Information has been appeared already about development of the magnetron modulators based on transistors. This modulator has been developed as power supply for the RF magnetron with output pulse power of 3 MW and average power 10 kW. One hundred IGBT transistors, connected in parallel, are employed in the modulator to commute its capacitors on the pulse transformer primary winding. Pulse is generated on the secondary winding with 50 kV voltage, 100 A current, 0.6÷6 μs pulse length and frequency up to 2 kHz.

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