Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

V. V. Uglov, N. T. Kvasov, G. E. Remnev, V. I. Shymanski, E. L. Korenevski, S. V. Zlotski, G. Abadias, J. O'Connel, A. van Vuuren

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

Original languageEnglish
Pages (from-to)228-235
Number of pages8
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Publication statusPublished - 15 Nov 2018


  • a-SiN
  • Aluminum nitride
  • Amorphous layers
  • Argon ions
  • Bubbles
  • Helium ions
  • Implantation
  • Multilayered films
  • nc-AlN
  • Post-irradiated annealing
  • Radiation defects
  • Silicon nitride

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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