Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

Abstract

The results of microstructure and phase composition of the AlN/SiN_x multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiN_x) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiN_x layers. It is of the consequence of enhanced implanted ions migration towards the a-SiN_x layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiN_x layers are believed to serve as sinks for radiation-induced defects.

Original language	English
Pages (from-to)	228-235
Number of pages	8
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	435
DOIs	https://doi.org/10.1016/j.nimb.2018.01.012
Publication status	Published - 15 Nov 2018

Keywords

a-SiN
Aluminum nitride
Amorphous layers
Argon ions
Bubbles
Helium ions
Implantation
Multilayered films
nc-AlN
Post-irradiated annealing
Radiation defects
Silicon nitride

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2018.01.012

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Uglov, V. V., Kvasov, N. T., Remnev, G. E., Shymanski, V. I., Korenevski, E. L., Zlotski, S. V., Abadias, G., O'Connel, J., & van Vuuren, A. (2018). Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 435, 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 435, 15.11.2018, p. 228-235.

Research output: Contribution to journal › Article › peer-review

Uglov, VV, Kvasov, NT, Remnev, GE, Shymanski, VI, Korenevski, EL, Zlotski, SV, Abadias, G, O'Connel, J & van Vuuren, A 2018, 'Size effect in AlN/SiN multilayered films irradiated with helium and argon ions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 435, pp. 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Uglov, V. V. ; Kvasov, N. T. ; Remnev, G. E. ; Shymanski, V. I. ; Korenevski, E. L. ; Zlotski, S. V. ; Abadias, G. ; O'Connel, J. ; van Vuuren, A. / Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018 ; Vol. 435. pp. 228-235.

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abstract = "The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.",

keywords = "a-SiN, Aluminum nitride, Amorphous layers, Argon ions, Bubbles, Helium ions, Implantation, Multilayered films, nc-AlN, Post-irradiated annealing, Radiation defects, Silicon nitride",

author = "Uglov, {V. V.} and Kvasov, {N. T.} and Remnev, {G. E.} and Shymanski, {V. I.} and Korenevski, {E. L.} and Zlotski, {S. V.} and G. Abadias and J. O'Connel and {van Vuuren}, A.",

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doi = "10.1016/j.nimb.2018.01.012",

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T1 - Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

AU - Uglov, V. V.

AU - Kvasov, N. T.

AU - Remnev, G. E.

AU - Shymanski, V. I.

AU - Korenevski, E. L.

AU - Zlotski, S. V.

AU - Abadias, G.

AU - O'Connel, J.

AU - van Vuuren, A.

PY - 2018/11/15

Y1 - 2018/11/15

N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

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KW - Post-irradiated annealing

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