Abstract
The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.
Original language | English |
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Pages (from-to) | 228-235 |
Number of pages | 8 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 435 |
DOIs | |
Publication status | Published - 15 Nov 2018 |
Keywords
- a-SiN
- Aluminum nitride
- Amorphous layers
- Argon ions
- Bubbles
- Helium ions
- Implantation
- Multilayered films
- nc-AlN
- Post-irradiated annealing
- Radiation defects
- Silicon nitride
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation