Size effect in AlN/SiN multilayered films irradiated with helium and argon ions

V. V. Uglov, N. T. Kvasov, G. E. Remnev, V. I. Shymanski, E. L. Korenevski, S. V. Zlotski, G. Abadias, J. O'Connel, A. van Vuuren

Research School of High-Energy Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The results of microstructure and phase composition of the AlN/SiN_x multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiN_x) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiN_x layers. It is of the consequence of enhanced implanted ions migration towards the a-SiN_x layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiN_x layers are believed to serve as sinks for radiation-induced defects.

Original language	English
Pages (from-to)	228-235
Number of pages	8
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	435
DOIs	https://doi.org/10.1016/j.nimb.2018.01.012
Publication status	Published - 15 Nov 2018

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Keywords

a-SiN
Aluminum nitride
Amorphous layers
Argon ions
Bubbles
Helium ions
Implantation
Multilayered films
nc-AlN
Post-irradiated annealing
Radiation defects
Silicon nitride

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

Cite this

Uglov, V. V., Kvasov, N. T., Remnev, G. E., Shymanski, V. I., Korenevski, E. L., Zlotski, S. V., Abadias, G., O'Connel, J., & van Vuuren, A. (2018). Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 435, 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 435, 15.11.2018, p. 228-235.

Research output: Contribution to journal › Article

Uglov, VV, Kvasov, NT, Remnev, GE, Shymanski, VI, Korenevski, EL, Zlotski, SV, Abadias, G, O'Connel, J & van Vuuren, A 2018, 'Size effect in AlN/SiN multilayered films irradiated with helium and argon ions', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 435, pp. 228-235. https://doi.org/10.1016/j.nimb.2018.01.012

Uglov, V. V. ; Kvasov, N. T. ; Remnev, G. E. ; Shymanski, V. I. ; Korenevski, E. L. ; Zlotski, S. V. ; Abadias, G. ; O'Connel, J. ; van Vuuren, A. / Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2018 ; Vol. 435. pp. 228-235.

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abstract = "The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.",

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AU - Kvasov, N. T.

AU - Remnev, G. E.

AU - Shymanski, V. I.

AU - Korenevski, E. L.

AU - Zlotski, S. V.

AU - Abadias, G.

AU - O'Connel, J.

AU - van Vuuren, A.

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N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.

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Access to Document

10.1016/j.nimb.2018.01.012