Abstract
The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.
| Original language | English |
|---|---|
| Pages (from-to) | 228-235 |
| Number of pages | 8 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 435 |
| DOIs | |
| Publication status | Published - 15 Nov 2018 |
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Keywords
- a-SiN
- Aluminum nitride
- Amorphous layers
- Argon ions
- Bubbles
- Helium ions
- Implantation
- Multilayered films
- nc-AlN
- Post-irradiated annealing
- Radiation defects
- Silicon nitride
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Size effect in AlN/SiN multilayered films irradiated with helium and argon ions. / Uglov, V. V.; Kvasov, N. T.; Remnev, G. E.; Shymanski, V. I.; Korenevski, E. L.; Zlotski, S. V.; Abadias, G.; O'Connel, J.; van Vuuren, A.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 435, 15.11.2018, p. 228-235.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Size effect in AlN/SiN multilayered films irradiated with helium and argon ions
AU - Uglov, V. V.
AU - Kvasov, N. T.
AU - Remnev, G. E.
AU - Shymanski, V. I.
AU - Korenevski, E. L.
AU - Zlotski, S. V.
AU - Abadias, G.
AU - O'Connel, J.
AU - van Vuuren, A.
PY - 2018/11/15
Y1 - 2018/11/15
N2 - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.
AB - The results of microstructure and phase composition of the AlN/SiNx multilayered films after the irradiation with helium and argon ions are presented. The multilayered films with alternating nanocrystalline (nc-AlN) and amorphous (a-SiNx) phases with thicknesses from 2 to 10 nm were obtained by reactive magnetron sputtering. X-ray diffraction results showed the dependence of the crystal lattice parameters of the nc-AlN phase on the thickness which is explained by size affect. After the irradiation with helium (30 keV) and argon (180 keV) ions the radiation-induced point defects as well as their clusters are produced in the films and mainly localized in the amorphous a-SiNx layers. It is of the consequence of enhanced implanted ions migration towards the a-SiNx layers and bubbles formation, as revealed by high-resolution transmission electron microscopy. The average size of the bubbles is 2.0–2.4 nm and grows up to 4–5 nm after the post-irradiation vacuum (800 °C) annealing. The amorphous a-SiNx layers are believed to serve as sinks for radiation-induced defects.
KW - a-SiN
KW - Aluminum nitride
KW - Amorphous layers
KW - Argon ions
KW - Bubbles
KW - Helium ions
KW - Implantation
KW - Multilayered films
KW - nc-AlN
KW - Post-irradiated annealing
KW - Radiation defects
KW - Silicon nitride
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UR - http://www.scopus.com/inward/citedby.url?scp=85041957015&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2018.01.012
DO - 10.1016/j.nimb.2018.01.012
M3 - Article
VL - 435
SP - 228
EP - 235
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -