Silicon Carbide on Silicon (110)

Surface Structure and Mechanisms of Epitaxial Growth

S. Sambonsuge, L. N. Nikitina, Yu Yu Hervieu, M. Suemitsu, S. N. Filimonov

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

Original languageEnglish
Pages (from-to)1439-1444
Number of pages6
JournalRussian Physics Journal
Volume56
Issue number12
DOIs
Publication statusPublished - 2014

Fingerprint

silicon carbides
surface energy
silicon
hydrogen
epitaxy
passivity
surface temperature
density functional theory
anisotropy

Keywords

  • heteroepitaxy
  • silicon
  • silicon carbide
  • surface energy
  • surface structure

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth. / Sambonsuge, S.; Nikitina, L. N.; Hervieu, Yu Yu; Suemitsu, M.; Filimonov, S. N.

In: Russian Physics Journal, Vol. 56, No. 12, 2014, p. 1439-1444.

Research output: Contribution to journalArticle

Sambonsuge, S. ; Nikitina, L. N. ; Hervieu, Yu Yu ; Suemitsu, M. ; Filimonov, S. N. / Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth. In: Russian Physics Journal. 2014 ; Vol. 56, No. 12. pp. 1439-1444.
@article{a75d2262b2e5457d8ab48ad56f26d0c7,
title = "Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth",
abstract = "Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.",
keywords = "heteroepitaxy, silicon, silicon carbide, surface energy, surface structure",
author = "S. Sambonsuge and Nikitina, {L. N.} and Hervieu, {Yu Yu} and M. Suemitsu and Filimonov, {S. N.}",
year = "2014",
doi = "10.1007/s11182-014-0197-7",
language = "English",
volume = "56",
pages = "1439--1444",
journal = "Russian Physics Journal",
issn = "1064-8887",
publisher = "Consultants Bureau",
number = "12",

}

TY - JOUR

T1 - Silicon Carbide on Silicon (110)

T2 - Surface Structure and Mechanisms of Epitaxial Growth

AU - Sambonsuge, S.

AU - Nikitina, L. N.

AU - Hervieu, Yu Yu

AU - Suemitsu, M.

AU - Filimonov, S. N.

PY - 2014

Y1 - 2014

N2 - Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

AB - Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

KW - heteroepitaxy

KW - silicon

KW - silicon carbide

KW - surface energy

KW - surface structure

UR - http://www.scopus.com/inward/record.url?scp=84899484909&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899484909&partnerID=8YFLogxK

U2 - 10.1007/s11182-014-0197-7

DO - 10.1007/s11182-014-0197-7

M3 - Article

VL - 56

SP - 1439

EP - 1444

JO - Russian Physics Journal

JF - Russian Physics Journal

SN - 1064-8887

IS - 12

ER -