Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth

S. Sambonsuge, L. N. Nikitina, Yu Yu Hervieu, M. Suemitsu, S. N. Filimonov

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.

Original languageEnglish
Pages (from-to)1439-1444
Number of pages6
JournalRussian Physics Journal
Volume56
Issue number12
DOIs
Publication statusPublished - 2014

Keywords

  • heteroepitaxy
  • silicon
  • silicon carbide
  • surface energy
  • surface structure

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth'. Together they form a unique fingerprint.

Cite this