Abstract
Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 1439-1444 |
| Number of pages | 6 |
| Journal | Russian Physics Journal |
| Volume | 56 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2014 |
Fingerprint
Keywords
- heteroepitaxy
- silicon
- silicon carbide
- surface energy
- surface structure
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth. / Sambonsuge, S.; Nikitina, L. N.; Hervieu, Yu Yu; Suemitsu, M.; Filimonov, S. N.
In: Russian Physics Journal, Vol. 56, No. 12, 2014, p. 1439-1444.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Silicon Carbide on Silicon (110)
T2 - Surface Structure and Mechanisms of Epitaxial Growth
AU - Sambonsuge, S.
AU - Nikitina, L. N.
AU - Hervieu, Yu Yu
AU - Suemitsu, M.
AU - Filimonov, S. N.
PY - 2014
Y1 - 2014
N2 - Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
AB - Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
KW - heteroepitaxy
KW - silicon
KW - silicon carbide
KW - surface energy
KW - surface structure
UR - http://www.scopus.com/inward/record.url?scp=84899484909&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899484909&partnerID=8YFLogxK
U2 - 10.1007/s11182-014-0197-7
DO - 10.1007/s11182-014-0197-7
M3 - Article
VL - 56
SP - 1439
EP - 1444
JO - Russian Physics Journal
JF - Russian Physics Journal
SN - 1064-8887
IS - 12
ER -