Abstract
Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
Original language | English |
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Pages (from-to) | 1439-1444 |
Number of pages | 6 |
Journal | Russian Physics Journal |
Volume | 56 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2014 |
Keywords
- heteroepitaxy
- silicon
- silicon carbide
- surface energy
- surface structure
ASJC Scopus subject areas
- Physics and Astronomy(all)