Abstract
Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 1439-1444 |
| Number of pages | 6 |
| Journal | Russian Physics Journal |
| Volume | 56 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2014 |
Keywords
- heteroepitaxy
- silicon
- silicon carbide
- surface energy
- surface structure
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Sambonsuge, S., Nikitina, L. N., Hervieu, Y. Y., Suemitsu, M., & Filimonov, S. N. (2014). Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth. Russian Physics Journal, 56(12), 1439-1444. https://doi.org/10.1007/s11182-014-0197-7