SiC MOSFETs robustness for diode-less applications

O. Avino-Salvado, C. Cheng, C. Buttay, H. Morel, D. Labrousse, S. Lefebvre, M. Ali

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.

Original languageEnglish
Pages (from-to)128-135
Number of pages8
JournalEPE Journal (European Power Electronics and Drives Journal)
Issue number3
Publication statusPublished - 3 Jul 2018
Externally publishedYes


  • diode-less
  • intrinsic diode
  • oxide traps
  • reliability
  • robustness
  • Silicon Carbide (SiC)
  • threshold voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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