Abstract
Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
| Original language | English |
|---|---|
| Pages (from-to) | 128-135 |
| Number of pages | 8 |
| Journal | EPE Journal (European Power Electronics and Drives Journal) |
| Volume | 28 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 3 Jul 2018 |
| Externally published | Yes |
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Keywords
- diode-less
- intrinsic diode
- MOSFET
- oxide traps
- reliability
- robustness
- Silicon Carbide (SiC)
- threshold voltage
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
SiC MOSFETs robustness for diode-less applications. / Avino-Salvado, O.; Cheng, C.; Buttay, C.; Morel, H.; Labrousse, D.; Lefebvre, S.; Ali, M.
In: EPE Journal (European Power Electronics and Drives Journal), Vol. 28, No. 3, 03.07.2018, p. 128-135.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - SiC MOSFETs robustness for diode-less applications
AU - Avino-Salvado, O.
AU - Cheng, C.
AU - Buttay, C.
AU - Morel, H.
AU - Labrousse, D.
AU - Lefebvre, S.
AU - Ali, M.
PY - 2018/7/3
Y1 - 2018/7/3
N2 - Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
AB - Silicon-Carbide (SiC) technology presents several advantages over silicon for power electronics applications, such as lower losses. However, SiC technology is not totally mature, and some reliability problems remain. This paper studies the robustness of SiC MOSFETs in the case of diode-less applications and the associated phenomena, such as gate oxide degradation. Several devices were stressed under conditions of inductive switching and inverse current conduction. These devices were periodically characterized. As a result, a threshold voltage shift was observed in the MOSFET, with a dependence on the duty cycle of the transistor. On the contrary, no significant degradation of the internal P-N junction of the transistor was observed.
KW - diode-less
KW - intrinsic diode
KW - MOSFET
KW - oxide traps
KW - reliability
KW - robustness
KW - Silicon Carbide (SiC)
KW - threshold voltage
UR - http://www.scopus.com/inward/record.url?scp=85044746816&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85044746816&partnerID=8YFLogxK
U2 - 10.1080/09398368.2018.1456836
DO - 10.1080/09398368.2018.1456836
M3 - Article
AN - SCOPUS:85044746816
VL - 28
SP - 128
EP - 135
JO - EPE Journal (European Power Electronics and Drives Journal)
JF - EPE Journal (European Power Electronics and Drives Journal)
SN - 0939-8368
IS - 3
ER -