Semiconductor power supply for capacitance copper bromide active filters

Abstract

The paper presents the result of the investigation and studying of the active optical filters based on CuBr-Iaser with capacitance type of GDT. The semiconductor power supply was developed for excitation of the active element. The maximum PRF of the active filter is limited by physical process. In the work the result of testing of the designed power supply with different types of GDT are presented. The topology of the high voltage power supply allows to achieve high PRF (about 100 kHz). The maximum power of the power supply is 1 kW.

Original language	English
Title of host publication	2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings
Publisher	IEEE Computer Society
Pages	379-382
Number of pages	4
Volume	2018-July
ISBN (Print)	9781538650219
DOIs	https://doi.org/10.1109/EDM.2018.8435086
Publication status	Published - 13 Aug 2018
Event	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Erlagol, Altai, Russian Federation Duration: 29 Jun 2018 → 3 Jul 2018

Conference

Conference	19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018
Country	Russian Federation
City	Erlagol, Altai
Period	29.6.18 → 3.7.18

Keywords

Active quantum filter
Capacitance GDT
CuBr-laser
High pulse repetition frequency
Laser monitor
Semiconductor power supply

ASJC Scopus subject areas

Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics

Access to Document

10.1109/EDM.2018.8435086

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Cite this

Gugin, P. P., & Trigub, M. V. (2018). Semiconductor power supply for capacitance copper bromide active filters. In 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings (Vol. 2018-July, pp. 379-382). [8435086] IEEE Computer Society. https://doi.org/10.1109/EDM.2018.8435086

Semiconductor power supply for capacitance copper bromide active filters. / Gugin, Pavel P.; Trigub, Maxim V.

2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. Vol. 2018-July IEEE Computer Society, 2018. p. 379-382 8435086.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Gugin, PP & Trigub, MV 2018, Semiconductor power supply for capacitance copper bromide active filters. in 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings. vol. 2018-July, 8435086, IEEE Computer Society, pp. 379-382, 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018, Erlagol, Altai, Russian Federation, 29.6.18. https://doi.org/10.1109/EDM.2018.8435086

@inproceedings{d270652306014187906a80ec36646201,

title = "Semiconductor power supply for capacitance copper bromide active filters",

abstract = "The paper presents the result of the investigation and studying of the active optical filters based on CuBr-Iaser with capacitance type of GDT. The semiconductor power supply was developed for excitation of the active element. The maximum PRF of the active filter is limited by physical process. In the work the result of testing of the designed power supply with different types of GDT are presented. The topology of the high voltage power supply allows to achieve high PRF (about 100 kHz). The maximum power of the power supply is 1 kW.",

keywords = "Active quantum filter, Capacitance GDT, CuBr-laser, High pulse repetition frequency, Laser monitor, Semiconductor power supply",

author = "Gugin, {Pavel P.} and Trigub, {Maxim V.}",

year = "2018",

month = aug,

day = "13",

doi = "10.1109/EDM.2018.8435086",

language = "English",

isbn = "9781538650219",

volume = "2018-July",

pages = "379--382",

booktitle = "2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings",

publisher = "IEEE Computer Society",

address = "United States",

note = "19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 ; Conference date: 29-06-2018 Through 03-07-2018",

}

TY - GEN

T1 - Semiconductor power supply for capacitance copper bromide active filters

AU - Gugin, Pavel P.

AU - Trigub, Maxim V.

PY - 2018/8/13

Y1 - 2018/8/13

N2 - The paper presents the result of the investigation and studying of the active optical filters based on CuBr-Iaser with capacitance type of GDT. The semiconductor power supply was developed for excitation of the active element. The maximum PRF of the active filter is limited by physical process. In the work the result of testing of the designed power supply with different types of GDT are presented. The topology of the high voltage power supply allows to achieve high PRF (about 100 kHz). The maximum power of the power supply is 1 kW.

AB - The paper presents the result of the investigation and studying of the active optical filters based on CuBr-Iaser with capacitance type of GDT. The semiconductor power supply was developed for excitation of the active element. The maximum PRF of the active filter is limited by physical process. In the work the result of testing of the designed power supply with different types of GDT are presented. The topology of the high voltage power supply allows to achieve high PRF (about 100 kHz). The maximum power of the power supply is 1 kW.

KW - Active quantum filter

KW - Capacitance GDT

KW - CuBr-laser

KW - High pulse repetition frequency

KW - Laser monitor

KW - Semiconductor power supply

UR - http://www.scopus.com/inward/record.url?scp=85052386535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85052386535&partnerID=8YFLogxK

U2 - 10.1109/EDM.2018.8435086

DO - 10.1109/EDM.2018.8435086

M3 - Conference contribution

AN - SCOPUS:85052386535

SN - 9781538650219

VL - 2018-July

SP - 379

EP - 382

BT - 2018 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018 - Proceedings

PB - IEEE Computer Society

T2 - 19th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices, EDM 2018

Y2 - 29 June 2018 through 3 July 2018

ER -