Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures

S. N. Grinyaev, A. N. Razzhuvalov

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The specific features of the tunneling current in wurtzite GaN/AlGaN(0001) two-barrier structures are studied by solving the Schrödinger equation and the Poisson equation simultaneously, with regard to spontaneous and piezoelectric polarizations. It is shown that the internal fields manifest themselves in the asymmetry of the tunneling current via the value of the electronic charge in the quantum well. This charge is larger when the internal and external fields in the well compensate each other, resulting in smaller shifts of potential and resonance levels in the active region with voltage, in the higher resistance of the structure, and in the linear current-voltage dependence within a wide range of voltages. When the internal and external fields are the same, the current exhibits a sharp negative-differential-conductivity structure, with the peak-to-valley ratio equal to about four. The structure is similar to one of the branches of the current-voltage characteristic of the GaAs/AlGaAs(001) two-barrier structure, suggesting that nitrides are promising materials for resonance-tunneling devices.

Original languageEnglish
Pages (from-to)675-680
Number of pages6
JournalSemiconductors
Volume40
Issue number6
DOIs
Publication statusPublished - Jun 2006
Externally publishedYes

Fingerprint

Heterojunctions
Electric potential
electric potential
Poisson equation
Current voltage characteristics
Nitrides
Semiconductor quantum wells
Polarization
high resistance
wurtzite
nitrides
valleys
aluminum gallium arsenides
aluminum gallium nitride
asymmetry
quantum wells
conductivity
shift
polarization
electronics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Self-consistent calculation of tunneling current in w-GaN/AlGaN(0001) two-barrier heterostructures. / Grinyaev, S. N.; Razzhuvalov, A. N.

In: Semiconductors, Vol. 40, No. 6, 06.2006, p. 675-680.

Research output: Contribution to journalArticle

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