Abstract
A new effect that accompanies electrons channeled in a crystal is considered. This phenomenon was previously predicted was called channeling secondary electron emission (CSEE). The exact CSEE cross-section on the basis of using the exact Bloch wave function of electron channeled in a crystal is obtained. The detailed investigation of CSEE cross-section is performed. It is shown that angular distribution of electrons emitted due to CSEE has a complex form.
| Original language | English |
|---|---|
| Pages (from-to) | 14-18 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 276 |
| DOIs | |
| Publication status | Published - 1 Apr 2012 |
Keywords
- Auger emission
- Bloch wave function
- Channeling electrons
- Quantum electrodynamics
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
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Korotchenko, K. B., Kunashenko, Y. P., & Tukhfatullin, T. A. (2012). Secondary electron emission induced by channeled relativistic electrons in a (1 1 0) Si crystal. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 276, 14-18. https://doi.org/10.1016/j.nimb.2012.01.006