Abstract
This letter presents a correlation between the reduction of the saturation current level and increase of on-state resistance and the top-metal ageing of normally ON SiC junction gate field effecttransistors. For this study, ageing has been obtained using repetitive short-circuit operations. Among monitored parameters during ageing, on-state resistance and short-circuit current level are those, which have the strongest evolution. The top-metal degradation has been characterized via the on-state resistance measurement during ageing. In particular, we clearly show that the top-metal restructuration due to ageing leads to an additional voltage drop between gate and source terminals and results to a lower gate-source junction voltage.
| Original language | English |
|---|---|
| Article number | 6314491 |
| Pages (from-to) | 621-624 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 28 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1 Jan 2013 |
| Externally published | Yes |
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Keywords
- Ageing
- current limiter
- junction gate field-effect transistors (JFETs)
- short circuit
- silicon carbide
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Cite this
Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors. / Berkani, M.; Lefebvre, S.; Khatir, Z.
In: IEEE Transactions on Power Electronics, Vol. 28, No. 2, 6314491, 01.01.2013, p. 621-624.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Saturation current and on-resistance correlation during during repetitive short-circuit conditions on SiC JFET transistors
AU - Berkani, M.
AU - Lefebvre, S.
AU - Khatir, Z.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - This letter presents a correlation between the reduction of the saturation current level and increase of on-state resistance and the top-metal ageing of normally ON SiC junction gate field effecttransistors. For this study, ageing has been obtained using repetitive short-circuit operations. Among monitored parameters during ageing, on-state resistance and short-circuit current level are those, which have the strongest evolution. The top-metal degradation has been characterized via the on-state resistance measurement during ageing. In particular, we clearly show that the top-metal restructuration due to ageing leads to an additional voltage drop between gate and source terminals and results to a lower gate-source junction voltage.
AB - This letter presents a correlation between the reduction of the saturation current level and increase of on-state resistance and the top-metal ageing of normally ON SiC junction gate field effecttransistors. For this study, ageing has been obtained using repetitive short-circuit operations. Among monitored parameters during ageing, on-state resistance and short-circuit current level are those, which have the strongest evolution. The top-metal degradation has been characterized via the on-state resistance measurement during ageing. In particular, we clearly show that the top-metal restructuration due to ageing leads to an additional voltage drop between gate and source terminals and results to a lower gate-source junction voltage.
KW - Ageing
KW - current limiter
KW - junction gate field-effect transistors (JFETs)
KW - short circuit
KW - silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=84867181904&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84867181904&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2012.2215629
DO - 10.1109/TPEL.2012.2215629
M3 - Article
AN - SCOPUS:84867181904
VL - 28
SP - 621
EP - 624
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
SN - 0885-8993
IS - 2
M1 - 6314491
ER -