Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.
|Number of pages||3|
|Journal||Soviet physics. Semiconductors|
|Publication status||Published - Jul 1983|
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