ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE.

A. P. Mamontov, V. V. Peshev, I. P. Chernov

Research output: Contribution to journalArticle

Abstract

Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.

Original languageEnglish
Pages (from-to)785-787
Number of pages3
JournalSoviet physics. Semiconductors
Volume17
Issue number7
Publication statusPublished - Jul 1983

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Gallium arsenide
Protons
Electric space charge
Annealing
Electric fields
Deep level transient spectroscopy
Activation energy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE. / Mamontov, A. P.; Peshev, V. V.; Chernov, I. P.

In: Soviet physics. Semiconductors, Vol. 17, No. 7, 07.1983, p. 785-787.

Research output: Contribution to journalArticle

@article{87d3d51d748749a6b5626a15aab2bb07,
title = "ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE.",
abstract = "Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.",
author = "Mamontov, {A. P.} and Peshev, {V. V.} and Chernov, {I. P.}",
year = "1983",
month = "7",
language = "English",
volume = "17",
pages = "785--787",
journal = "Soviet physics. Semiconductors",
issn = "0038-5700",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE.

AU - Mamontov, A. P.

AU - Peshev, V. V.

AU - Chernov, I. P.

PY - 1983/7

Y1 - 1983/7

N2 - Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.

AB - Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.

UR - http://www.scopus.com/inward/record.url?scp=0020777521&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020777521&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 785

EP - 787

JO - Soviet physics. Semiconductors

JF - Soviet physics. Semiconductors

SN - 0038-5700

IS - 7

ER -