Abstract
Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.
| Original language | English |
|---|---|
| Pages (from-to) | 785-787 |
| Number of pages | 3 |
| Journal | Soviet physics. Semiconductors |
| Volume | 17 |
| Issue number | 7 |
| Publication status | Published - Jul 1983 |
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ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE. / Mamontov, A. P.; Peshev, V. V.; Chernov, I. P.
In: Soviet physics. Semiconductors, Vol. 17, No. 7, 07.1983, p. 785-787.Research output: Contribution to journal › Article
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TY - JOUR
T1 - ROLE OF THE CHARGE STATE IN THE ACCUMULATION AND ANNEALING OF DEEP CENTERS IN PROTON-IRRADIATED GALLIUM ARSENIDE.
AU - Mamontov, A. P.
AU - Peshev, V. V.
AU - Chernov, I. P.
PY - 1983/7
Y1 - 1983/7
N2 - Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.
AB - Deep level transient spectroscopy was used to investigate the accumulation and annealing of deep centers in the neutral bulk of GaAs and in the space-charge region of samples irradiated with 10 Mev protons. It was found that an electric field did not affect accumulation of the E3 centers. It was established that the electric field in the space-charge region slowed down the annealing of the E3 and E5 centers and that in the neutral bulk the annealing of these centers exhibited a second stage due to the influence of internal electric fields in disordered regions. The rates of accumulation of the E2, E3, and E5 centers, as well as the activation energies of annealing of these centers were determined for the neutral bulk and for the space-charge region.
UR - http://www.scopus.com/inward/record.url?scp=0020777521&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0020777521&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0020777521
VL - 17
SP - 785
EP - 787
JO - Soviet physics. Semiconductors
JF - Soviet physics. Semiconductors
SN - 0038-5700
IS - 7
ER -