Role of tension in microstructure formation in pure metals affected by ion implantation

Andrei N. Didenko, Alexander E. Ligachev, Yuriy P. Sharkeev, Galina V. Pushkareva, Eduard V. Kozlov, Alexander I. Ryabchikov, Ramil A. Nasyrov, Galina I. Shakhmeister

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Dislocation structures in the near surface layers of α-Fe produced by repetitively pulsed intense Hf ion beams with doses of 0.23 × 1016 to 24.0 × 1016 ions cm-2 were studied by electron microscopy. Both ion implantation and plasma deposition were used. Under such conditions the maximum impurity concentration of Hf in α-Fe appeared to be 70 at.%, the dose of implanted ions being determined from profile analysis of Hf distribution by the RBS method. A developed dislocation structure is formed by ion implantation in the near surface layer of α-Fe over a depth of 100 μm. The dislocation density reaches its maximum value at a depth of 5-7 μm from the surface and is increased by about 1-2 orders of magnitude from that in the initial state. Static tensions formed in the doped layer play a decisive role in the formation of the dislocation structure.

Original languageEnglish
Pages (from-to)441-445
Number of pages5
JournalNuclear Inst. and Methods in Physics Research, B
Issue number4
Publication statusPublished - 1991

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

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