Robustness of SiC JFET in short-circuit modes

Narjes Boughrara, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, Jean Claude Faugieres

Research output: Contribution to journal › Article › peer-review

Abstract

This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original language	English
Pages (from-to)	51-53
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2008668
Publication status	Published - 1 Jan 2009
Externally published	Yes

Keywords

JFETs
Short-circuit current
Silicon carbide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2008.2008668

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abstract = "This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).",

keywords = "JFETs, Short-circuit current, Silicon carbide",

author = "Narjes Boughrara and Sabrine Moumen and St{\'e}phane Lefebvre and Zoubir Khatir and Peter Friedrichs and Faugieres, {Jean Claude}",

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AU - Moumen, Sabrine

AU - Lefebvre, Stéphane

AU - Khatir, Zoubir

AU - Friedrichs, Peter

AU - Faugieres, Jean Claude

PY - 2009/1/1

Y1 - 2009/1/1

N2 - This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

AB - This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

KW - JFETs

KW - Short-circuit current

KW - Silicon carbide

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