Robustness of SiC JFET in short-circuit modes

Narjes Boughrara, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, Jean Claude Faugieres

Research output: Contribution to journal › Article

Abstract

This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original language	English
Pages (from-to)	51-53
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2008668
Publication status	Published - 1 Jan 2009
Externally published	Yes

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Keywords

JFETs
Short-circuit current
Silicon carbide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P., & Faugieres, J. C. (2009). Robustness of SiC JFET in short-circuit modes. IEEE Electron Device Letters, 30(1), 51-53. https://doi.org/10.1109/LED.2008.2008668

@article{4b87bac27cdb4e95ba20390977c585b8,

title = "Robustness of SiC JFET in short-circuit modes",

abstract = "This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).",

keywords = "JFETs, Short-circuit current, Silicon carbide",

author = "Narjes Boughrara and Sabrine Moumen and St{\'e}phane Lefebvre and Zoubir Khatir and Peter Friedrichs and Faugieres, {Jean Claude}",

year = "2009",

month = "1",

day = "1",

doi = "10.1109/LED.2008.2008668",

language = "English",

volume = "30",

pages = "51--53",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Robustness of SiC JFET in short-circuit modes

AU - Boughrara, Narjes

AU - Moumen, Sabrine

AU - Lefebvre, Stéphane

AU - Khatir, Zoubir

AU - Friedrichs, Peter

AU - Faugieres, Jean Claude

PY - 2009/1/1

Y1 - 2009/1/1

N2 - This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

AB - This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

KW - JFETs

KW - Short-circuit current

KW - Silicon carbide

UR - http://www.scopus.com/inward/record.url?scp=58149528225&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149528225&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2008668

DO - 10.1109/LED.2008.2008668

M3 - Article

AN - SCOPUS:58149528225

VL - 30

SP - 51

EP - 53

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 1

ER -

Access to Document

10.1109/LED.2008.2008668