This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).
- Short-circuit current
- Silicon carbide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering