Robustness of SiC JFET in short-circuit modes

Narjes Boughrara, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, Jean Claude Faugieres

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original languageEnglish
Pages (from-to)51-53
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number1
DOIs
Publication statusPublished - 1 Jan 2009
Externally publishedYes

Keywords

  • JFETs
  • Short-circuit current
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P., & Faugieres, J. C. (2009). Robustness of SiC JFET in short-circuit modes. IEEE Electron Device Letters, 30(1), 51-53. https://doi.org/10.1109/LED.2008.2008668