Robustness of SiC JFET in short-circuit modes

Narjes Boughrara, Sabrine Moumen, Stéphane Lefebvre, Zoubir Khatir, Peter Friedrichs, Jean Claude Faugieres

Research output: Contribution to journal › Article

Abstract

This letter presents first destructive results showing the robustness of SiC JFET transistors from SiCED in current limitation regime or short-circuit operation. Crystal temperature during failure was estimated after different electrical characterizations and using appropriate models of saturation current. This letter shows the exceptional robustness of SiC JFET transistors in current limitation mode compared to Si devices (MOSFETS and IGBTs).

Original language	English
Pages (from-to)	51-53
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2008668
Publication status	Published - 1 Jan 2009
Externally published	Yes

Fingerprint

Junction gate field effect transistors

Short circuit currents

Transistors

Insulated gate bipolar transistors (IGBT)

Crystals

Temperature

Keywords

JFETs
Short-circuit current
Silicon carbide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Boughrara, N., Moumen, S., Lefebvre, S., Khatir, Z., Friedrichs, P., & Faugieres, J. C. (2009). Robustness of SiC JFET in short-circuit modes. IEEE Electron Device Letters, 30(1), 51-53. https://doi.org/10.1109/LED.2008.2008668

Robustness of SiC JFET in short-circuit modes. / Boughrara, Narjes; Moumen, Sabrine; Lefebvre, Stéphane; Khatir, Zoubir; Friedrichs, Peter; Faugieres, Jean Claude.

In: IEEE Electron Device Letters, Vol. 30, No. 1, 01.01.2009, p. 51-53.

Research output: Contribution to journal › Article

Boughrara, N, Moumen, S, Lefebvre, S, Khatir, Z, Friedrichs, P & Faugieres, JC 2009, 'Robustness of SiC JFET in short-circuit modes', IEEE Electron Device Letters, vol. 30, no. 1, pp. 51-53. https://doi.org/10.1109/LED.2008.2008668

Boughrara N, Moumen S, Lefebvre S, Khatir Z, Friedrichs P, Faugieres JC. Robustness of SiC JFET in short-circuit modes. IEEE Electron Device Letters. 2009 Jan 1;30(1):51-53. https://doi.org/10.1109/LED.2008.2008668

Boughrara, Narjes ; Moumen, Sabrine ; Lefebvre, Stéphane ; Khatir, Zoubir ; Friedrichs, Peter ; Faugieres, Jean Claude. / Robustness of SiC JFET in short-circuit modes. In: IEEE Electron Device Letters. 2009 ; Vol. 30, No. 1. pp. 51-53.

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Access to Document

10.1109/LED.2008.2008668