Robustness of 1.2 kV SiC MOSFET devices

D. Othman, S. Lefebvre, M. Berkani, Z. Khatir, A. Ibrahim, A. Bouzourene

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests. Observed failures appear at the gate level with effects on the mode of failure depending of the short-circuit duration.

Original languageEnglish
Pages (from-to)1735-1738
Number of pages4
JournalMicroelectronics Reliability
Volume53
Issue number9-11
DOIs
Publication statusPublished - 1 Sep 2013
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Othman, D., Lefebvre, S., Berkani, M., Khatir, Z., Ibrahim, A., & Bouzourene, A. (2013). Robustness of 1.2 kV SiC MOSFET devices. Microelectronics Reliability, 53(9-11), 1735-1738. https://doi.org/10.1016/j.microrel.2013.07.072