Abstract
This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.
| Original language | English |
|---|---|
| Title of host publication | PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9783800739240 |
| Publication status | Published - 1 Jan 2015 |
| Externally published | Yes |
| Event | 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Germany Duration: 19 May 2015 → 20 May 2015 |
Publication series
| Name | PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of |
|---|
Conference
| Conference | 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 |
|---|---|
| Country | Germany |
| City | Nuremberg |
| Period | 19.5.15 → 20.5.15 |
Fingerprint
ASJC Scopus subject areas
- Industrial and Manufacturing Engineering
- Renewable Energy, Sustainability and the Environment
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering
Cite this
Robustness in short-circuit Mode of SiC MOSFETs. / Chen, Cheng; Labrousse, Denis; Lefebvre, Stéphane; Petit, Mickaël; Buttay, Cyril; Morel, Hervé.
PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. 7149084 (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Robustness in short-circuit Mode of SiC MOSFETs
AU - Chen, Cheng
AU - Labrousse, Denis
AU - Lefebvre, Stéphane
AU - Petit, Mickaël
AU - Buttay, Cyril
AU - Morel, Hervé
PY - 2015/1/1
Y1 - 2015/1/1
N2 - This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.
AB - This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.
UR - http://www.scopus.com/inward/record.url?scp=84997327395&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84997327395&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84997327395
T3 - PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
BT - PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
PB - Institute of Electrical and Electronics Engineers Inc.
ER -