Robustness in short-circuit Mode of SiC MOSFETs

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, Hervé Morel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Citations (Scopus)

Abstract

This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.

Original languageEnglish
Title of host publicationPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9783800739240
Publication statusPublished - 1 Jan 2015
Externally publishedYes
Event2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Germany
Duration: 19 May 201520 May 2015

Publication series

NamePCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Conference

Conference2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
CountryGermany
CityNuremberg
Period19.5.1520.5.15

Fingerprint

Silicon carbide
Short circuit currents
Leakage currents
Failure modes

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C., & Morel, H. (2015). Robustness in short-circuit Mode of SiC MOSFETs. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149084] (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of). Institute of Electrical and Electronics Engineers Inc..

Robustness in short-circuit Mode of SiC MOSFETs. / Chen, Cheng; Labrousse, Denis; Lefebvre, Stéphane; Petit, Mickaël; Buttay, Cyril; Morel, Hervé.

PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. 7149084 (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, C, Labrousse, D, Lefebvre, S, Petit, M, Buttay, C & Morel, H 2015, Robustness in short-circuit Mode of SiC MOSFETs. in PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of., 7149084, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of, Institute of Electrical and Electronics Engineers Inc., 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015, Nuremberg, Germany, 19.5.15.
Chen C, Labrousse D, Lefebvre S, Petit M, Buttay C, Morel H. Robustness in short-circuit Mode of SiC MOSFETs. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc. 2015. 7149084. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).
Chen, Cheng ; Labrousse, Denis ; Lefebvre, Stéphane ; Petit, Mickaël ; Buttay, Cyril ; Morel, Hervé. / Robustness in short-circuit Mode of SiC MOSFETs. PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).
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