Robustness in short-circuit Mode of SiC MOSFETs

Abstract

This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.

Original language	English
Title of host publication	PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9783800739240
Publication status	Published - 1 Jan 2015
Externally published	Yes
Event	2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Germany Duration: 19 May 2015 → 20 May 2015

Publication series

Name	PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Conference

Conference	2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
Country	Germany
City	Nuremberg
Period	19.5.15 → 20.5.15

ASJC Scopus subject areas

Industrial and Manufacturing Engineering
Renewable Energy, Sustainability and the Environment
Energy Engineering and Power Technology
Electrical and Electronic Engineering

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Cite this

Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C., & Morel, H. (2015). Robustness in short-circuit Mode of SiC MOSFETs. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149084] (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of). Institute of Electrical and Electronics Engineers Inc..

Robustness in short-circuit Mode of SiC MOSFETs. / Chen, Cheng; Labrousse, Denis; Lefebvre, Stéphane; Petit, Mickaël; Buttay, Cyril; Morel, Hervé.

PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. 7149084 (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, C, Labrousse, D, Lefebvre, S, Petit, M, Buttay, C & Morel, H 2015, Robustness in short-circuit Mode of SiC MOSFETs. in PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of., 7149084, PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of, Institute of Electrical and Electronics Engineers Inc., 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015, Nuremberg, Germany, 19.5.15.

Chen C, Labrousse D, Lefebvre S, Petit M, Buttay C, Morel H. Robustness in short-circuit Mode of SiC MOSFETs. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc. 2015. 7149084. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

Chen, Cheng ; Labrousse, Denis ; Lefebvre, Stéphane ; Petit, Mickaël ; Buttay, Cyril ; Morel, Hervé. / Robustness in short-circuit Mode of SiC MOSFETs. PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of. Institute of Electrical and Electronics Engineers Inc., 2015. (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of).

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