Robustness in short-circuit Mode of SiC MOSFETs

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, Hervé Morel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFETs submitted to short-circuit operations. MOSFETs manufactured from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFETs under short-circuit.

Original languageEnglish
Title of host publicationPCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9783800739240
Publication statusPublished - 1 Jan 2015
Externally publishedYes
Event2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 - Nuremberg, Germany
Duration: 19 May 201520 May 2015

Publication series

NamePCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of

Conference

Conference2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
CountryGermany
CityNuremberg
Period19.5.1520.5.15

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Renewable Energy, Sustainability and the Environment
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Robustness in short-circuit Mode of SiC MOSFETs'. Together they form a unique fingerprint.

  • Cite this

    Chen, C., Labrousse, D., Lefebvre, S., Petit, M., Buttay, C., & Morel, H. (2015). Robustness in short-circuit Mode of SiC MOSFETs. In PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of [7149084] (PCIM Europe 2015; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Proceedings of). Institute of Electrical and Electronics Engineers Inc..