Abstract
Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.
| Original language | English |
|---|---|
| Title of host publication | 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004 |
| Pages | 182-184 |
| Number of pages | 3 |
| Volume | 2 |
| Publication status | Published - 2004 |
| Event | 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation Duration: 26 Jun 2004 → 3 Jul 2004 |
Other
| Other | 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 |
|---|---|
| Country | Russian Federation |
| City | Tomsk |
| Period | 26.6.04 → 3.7.04 |
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Keywords
- Dielectric
- Modify surface
- Ozone measure
- Semiconducting layer
ASJC Scopus subject areas
- Engineering(all)
Cite this
Response kinetics of dielectric surface irradiated with ions to ozone influence. / Arbuzov, Aleksey I.; Dedkov, Vladimir Stanislavovich; Kabyshev, Alexander V.; Lucanin, Alexander A.
8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 2 2004. p. 182-184.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Response kinetics of dielectric surface irradiated with ions to ozone influence
AU - Arbuzov, Aleksey I.
AU - Dedkov, Vladimir Stanislavovich
AU - Kabyshev, Alexander V.
AU - Lucanin, Alexander A.
PY - 2004
Y1 - 2004
N2 - Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.
AB - Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.
KW - Dielectric
KW - Modify surface
KW - Ozone measure
KW - Semiconducting layer
UR - http://www.scopus.com/inward/record.url?scp=29144472902&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=29144472902&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0780383834
SN - 9780780383838
VL - 2
SP - 182
EP - 184
BT - 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
ER -