Response kinetics of dielectric surface irradiated with ions to ozone influence

Abstract

Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO₂ was showed.

Original language	English
Title of host publication	8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004
Pages	182-184
Number of pages	3
Volume	2
Publication status	Published - 2004
Event	8th Korea-Russia International Symposium on Science and Technology, KORUS 2004 - Tomsk, Russian Federation Duration: 26 Jun 2004 → 3 Jul 2004

Other

Other	8th Korea-Russia International Symposium on Science and Technology, KORUS 2004
Country	Russian Federation
City	Tomsk
Period	26.6.04 → 3.7.04

Keywords

Dielectric
Modify surface
Ozone measure
Semiconducting layer

ASJC Scopus subject areas

Engineering(all)

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Response kinetics of dielectric surface irradiated with ions to ozone influence. / Arbuzov, Aleksey I.; Dedkov, Vladimir Stanislavovich; Kabyshev, Alexander V.; Lucanin, Alexander A.

8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. Vol. 2 2004. p. 182-184.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Arbuzov, AI, Dedkov, VS, Kabyshev, AV & Lucanin, AA 2004, Response kinetics of dielectric surface irradiated with ions to ozone influence. in 8th Korea-Russia International Symposium on Science and Technology - Proceedings: KORUS 2004. vol. 2, pp. 182-184, 8th Korea-Russia International Symposium on Science and Technology, KORUS 2004, Tomsk, Russian Federation, 26.6.04.

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title = "Response kinetics of dielectric surface irradiated with ions to ozone influence",

abstract = "Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.",

keywords = "Dielectric, Modify surface, Ozone measure, Semiconducting layer",

author = "Arbuzov, {Aleksey I.} and Vladimir Stanislavovich Dedkov and Kabyshev, {Alexander V.} and Lucanin, {Alexander A.}",

year = "2004",

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AU - Dedkov, Vladimir Stanislavovich

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AU - Lucanin, Alexander A.

PY - 2004

Y1 - 2004

N2 - Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.

AB - Kinetics dependencies of electrical conduction of dielectrics irradiated with ions after influence ozone in air were considered. Possibility of the creation an ozone-sensitive elements on the base modified by ions BN and SiO2 was showed.

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KW - Modify surface

KW - Ozone measure

KW - Semiconducting layer

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