Abstract
Electron tunneling through the GaN/Ga1 - xAlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x <0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ∼1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a "red" or "blue" shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1 - xAlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.
| Original language | English |
|---|---|
| Pages (from-to) | 549-555 |
| Number of pages | 7 |
| Journal | Physics of the Solid State |
| Volume | 43 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2001 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Resonant electron tunneling in GaN/Ga1 - xAlxN(0001) strained structures with spontaneous polarization and piezoeffect. / Grinyaev, S. N.; Razzhuvalov, A. N.
In: Physics of the Solid State, Vol. 43, No. 3, 03.2001, p. 549-555.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Resonant electron tunneling in GaN/Ga1 - xAlxN(0001) strained structures with spontaneous polarization and piezoeffect
AU - Grinyaev, S. N.
AU - Razzhuvalov, A. N.
PY - 2001/3
Y1 - 2001/3
N2 - Electron tunneling through the GaN/Ga1 - xAlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x <0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ∼1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a "red" or "blue" shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1 - xAlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.
AB - Electron tunneling through the GaN/Ga1 - xAlxN(0001) wurtzite strained structures is investigated by the pseudopotential and scattering matrix methods. It is shown that the results of multiband calculations at low aluminum concentrations (x <0.3) are adequately described within the single-valley model in the envelope wave function method accounting for the dependences of the effective mass on the energy and strain. Upon electron tunneling through two-barrier structures, sharp resonance peaks are observed at a barrier thickness of several monolayers and the characteristic collision time in the resonance region is equal to ∼1 ps. The internal electric fields associated with spontaneous and piezoelectric polarizations lead to a "red" or "blue" shift in the resonance energy according to the thickness and location of barriers with respect to the polar axis. In the (GaN)n(Ga1 - xAlxN)m superlattices, the internal fields can form the Stark ladder of electronic states at a small number of ultrathin layers even in the absence of external fields.
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U2 - 10.1134/1.1356136
DO - 10.1134/1.1356136
M3 - Article
VL - 43
SP - 549
EP - 555
JO - Physics of the Solid State
JF - Physics of the Solid State
SN - 1063-7834
IS - 3
ER -