Research on the radiation exposure "memory effects" in AlGaAs heterostructures

A. V. Gradoboev, V. V. Sednev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Radiation exposure and long running time cause degradation of semiconductors' structures as well as semiconductors based on these structures. Besides, long running time can be the reason of partial radiation defects annealing. The purpose of the research work is to study the "memory effect" that happens during fast neuron radiation in AlGaAs heterostructures. Objects of the research are Infrared Light Emitting Electrodes (IRED) based on doubled AlGaAs heterostructures. During the experimental research LEDs were preliminarily radiated with fast neutrons, and radiation defects were annealed within the condition of current training with high temperatures, then emission power was measured. The research proved the existence of the "memory effect" that results in radiation stability enhancement with subsequent radiation. Possible mechanisms of the "memory effect" occurrence are under review.

Original languageEnglish
Title of host publicationIOP Conference Series: Materials Science and Engineering
PublisherInstitute of Physics Publishing
Volume81
Edition1
DOIs
Publication statusPublished - 23 Apr 2015
EventInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014 - Tomsk, Russian Federation
Duration: 3 Nov 20148 Nov 2014

Other

OtherInternational Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014
CountryRussian Federation
CityTomsk
Period3.11.148.11.14

Fingerprint

Heterojunctions
Radiation
Data storage equipment
Semiconductor materials
Defects
Neurons
Light emitting diodes
Neutrons
Annealing
Infrared radiation
Degradation
Electrodes
Temperature

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Gradoboev, A. V., & Sednev, V. V. (2015). Research on the radiation exposure "memory effects" in AlGaAs heterostructures. In IOP Conference Series: Materials Science and Engineering (1 ed., Vol. 81). [012007] Institute of Physics Publishing. https://doi.org/10.1088/1757-899X/81/1/012007

Research on the radiation exposure "memory effects" in AlGaAs heterostructures. / Gradoboev, A. V.; Sednev, V. V.

IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015. 012007.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gradoboev, AV & Sednev, VV 2015, Research on the radiation exposure "memory effects" in AlGaAs heterostructures. in IOP Conference Series: Materials Science and Engineering. 1 edn, vol. 81, 012007, Institute of Physics Publishing, International Scientific Conference on Radiation-Thermal Effects and Processes in Inorganic Materials, RTEP 2014, Tomsk, Russian Federation, 3.11.14. https://doi.org/10.1088/1757-899X/81/1/012007
Gradoboev AV, Sednev VV. Research on the radiation exposure "memory effects" in AlGaAs heterostructures. In IOP Conference Series: Materials Science and Engineering. 1 ed. Vol. 81. Institute of Physics Publishing. 2015. 012007 https://doi.org/10.1088/1757-899X/81/1/012007
Gradoboev, A. V. ; Sednev, V. V. / Research on the radiation exposure "memory effects" in AlGaAs heterostructures. IOP Conference Series: Materials Science and Engineering. Vol. 81 1. ed. Institute of Physics Publishing, 2015.
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