Research of GaAs target erosion factor under influence of pulsed power ion beam

G. E. Remnev, M. S. Saltymakov, Lie Zeng Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In the article the results of research on the coefficient of target erosion made of GaAs at the influence of high-power pulsed ion beam are presented. In the experiments the source of high-power ion beams was used. The beam parameters are the following: ion energy is 250 keV, current density at the target is up to 250 A/cm 2, pulse duration is 80 ns. The coefficient of target erosion and its dependence on the number of subsequent pulses were changed. The increase of surface roughness (R z) parameter at the increase of number of subsequent current beam pulses and the formation of regular structure of surface relief at the pulse number of 20-40 were noticed.

Original languageEnglish
Title of host publication2008 17th International Conference on High Power Particle Beams, BEAMS'08
Publication statusPublished - 2008
Event17th International Conference on High Power Particle Beams, BEAMS'08 - Xi'an, China
Duration: 6 Jul 200811 Jul 2008

Other

Other17th International Conference on High Power Particle Beams, BEAMS'08
CountryChina
CityXi'an
Period6.7.0811.7.08

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

Fingerprint Dive into the research topics of 'Research of GaAs target erosion factor under influence of pulsed power ion beam'. Together they form a unique fingerprint.

  • Cite this

    Remnev, G. E., Saltymakov, M. S., & Feng, L. Z. (2008). Research of GaAs target erosion factor under influence of pulsed power ion beam. In 2008 17th International Conference on High Power Particle Beams, BEAMS'08 [6203007]