Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications

G. Rostaing, M. Berkani, D. Mechouche, D. Labrousse, S. Lefebvre, Z. Khatir, Ph Dupuy

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This study aims to assess the reliability of smart converters for applications using 24 V batteries. It compares degradation effects and lifetime durations for similar dissipated energies when these smart power switches are subjected to normal and extreme protection test conditions. Three experimental ageing tests have been performed: (i) ageing tests under normal protection mode, (ii) ageing tests under repetitive inductive avalanche switching and (iii) ageing tests under repetitive short-circuit. Evolution of several electrical parameters such as on-state resistance; threshold voltage and saturation current have been monitored. Tested devices under normal condition and under repetitive inductive avalanche have failed after about the same number of cycles with the same dissipated energy. However, several results show a significant decrease of the lifetime under repetitive short-circuit tests for a similar dissipated energy.

Original languageEnglish
Pages (from-to)1703-1706
Number of pages4
JournalMicroelectronics Reliability
Volume53
Issue number9-11
DOIs
Publication statusPublished - 1 Sep 2013
Externally publishedYes

Fingerprint

electric batteries
field effect transistors
switches
Aging of materials
Switches
Short circuit currents
short circuits
avalanches
Threshold voltage
life (durability)
Degradation
threshold voltage
converters
Power MOSFET
energy
degradation
saturation
cycles

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications. / Rostaing, G.; Berkani, M.; Mechouche, D.; Labrousse, D.; Lefebvre, S.; Khatir, Z.; Dupuy, Ph.

In: Microelectronics Reliability, Vol. 53, No. 9-11, 01.09.2013, p. 1703-1706.

Research output: Contribution to journalArticle

Rostaing, G. ; Berkani, M. ; Mechouche, D. ; Labrousse, D. ; Lefebvre, S. ; Khatir, Z. ; Dupuy, Ph. / Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 v battery system applications. In: Microelectronics Reliability. 2013 ; Vol. 53, No. 9-11. pp. 1703-1706.
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