Abstract
The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.
| Original language | English |
|---|---|
| Pages | 312-315 |
| Number of pages | 4 |
| Publication status | Published - 1 Sep 2003 |
| Externally published | Yes |
| Event | 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003 |
Conference
| Conference | 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings |
|---|---|
| Country | United Kingdom |
| City | Cambridge |
| Period | 14.7.03 → 17.7.03 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Cite this
Saint-Eve, F., Lefebvre, S., & Khatir, Z. (2003). Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. 312-315. Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom.