Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions

F. Saint-Eve, S. Lefebvre, Z. Khatir

Research output: Contribution to conferencePaper

3 Citations (Scopus)

Abstract

The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.

Original languageEnglish
Pages312-315
Number of pages4
Publication statusPublished - 1 Sep 2003
Externally publishedYes
Event2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, United Kingdom
Duration: 14 Jul 200317 Jul 2003

Conference

Conference2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
CountryUnited Kingdom
CityCambridge
Period14.7.0317.7.03

Fingerprint

Insulated gate bipolar transistors (IGBT)
Short circuit currents
Transistors
Aging of materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Saint-Eve, F., Lefebvre, S., & Khatir, Z. (2003). Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. 312-315. Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom.

Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. / Saint-Eve, F.; Lefebvre, S.; Khatir, Z.

2003. 312-315 Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom.

Research output: Contribution to conferencePaper

Saint-Eve, F, Lefebvre, S & Khatir, Z 2003, 'Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions' Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom, 14.7.03 - 17.7.03, pp. 312-315.
Saint-Eve F, Lefebvre S, Khatir Z. Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. 2003. Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom.
Saint-Eve, F. ; Lefebvre, S. ; Khatir, Z. / Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions. Paper presented at 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings, Cambridge, United Kingdom.4 p.
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