Reliability of CoolMOS™ under extremely hard repetitive electrical working conditions

Abstract

The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.

Original language	English
Pages	312-315
Number of pages	4
Publication status	Published - 1 Sep 2003
Externally published	Yes
Event	2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003

Conference

Conference	2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs Proceedings
Country	United Kingdom
City	Cambridge
Period	14.7.03 → 17.7.03

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Reliability of CoolMOS{\texttrademark} under extremely hard repetitive electrical working conditions",

abstract = "The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.",

author = "F. Saint-Eve and S. Lefebvre and Z. Khatir",

year = "2003",

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N2 - The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.

AB - The paper deals with the behaviour of CoolMOS transistors under extremely hard repetitive working conditions like transient avalanche and short-circuit operations. The repetition of these severe working operations is responsible for the devices ageing and results unavoidably in the components failures. A long term campaign of experimental tests was made in order to determine the number of hard working operations the devices can support before failure for different dissipated energies. Moreover, the CoolMOS behaviour was compared with IGBTs having similar characteristics. The results show the very good ability of these devices to work in extremely hard repetitive working operations.

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