Recovery of the dielectric strength of a pseudospark switch in a regime of high pulse repetition rate

Yu D. Korolev, O. B. Frants, V. G. Geyman, N. V. Landl, I. A. Shemyakin, K. Frank, R. Bischoff, J. Pankert, K. Bergmann

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    Increasing the pulse repetition rate of any type of gas discharge switching device (pseudospark switch including) is limited by the rate of plasma de-ionization in a pause between the pulses. If residual plasma from a proceeding pulse remains in the gap to the instant when a succeeding pulse arrives to the electrodes, then the breakdown voltage for the switch decreases. Different methods for suppressing this effect are used in practice. One of them is the forced removal of the products of the preceding breakdown from the gap at the instant when the succeeding pulse arrives. This method is investigated in the present paper.

    Original languageEnglish
    Title of host publicationConference Record of the International Power Modulator Symposium and High Voltage Workshop
    Pages592-595
    Number of pages4
    Publication statusPublished - 2004
    Event2004 IEEE International Power Modulator Conference: 26th International Power Modulator Symposium and 2004 High Voltage Workshop - San Francisco, CA, United States
    Duration: 23 May 200426 May 2004

    Other

    Other2004 IEEE International Power Modulator Conference: 26th International Power Modulator Symposium and 2004 High Voltage Workshop
    CountryUnited States
    CitySan Francisco, CA
    Period23.5.0426.5.04

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Korolev, Y. D., Frants, O. B., Geyman, V. G., Landl, N. V., Shemyakin, I. A., Frank, K., Bischoff, R., Pankert, J., & Bergmann, K. (2004). Recovery of the dielectric strength of a pseudospark switch in a regime of high pulse repetition rate. In Conference Record of the International Power Modulator Symposium and High Voltage Workshop (pp. 592-595)