Abstract
The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.
| Original language | English |
|---|---|
| Pages (from-to) | 328-330 |
| Number of pages | 3 |
| Journal | Radiation Measurements |
| Volume | 45 |
| Issue number | 3-6 |
| DOIs | |
| Publication status | Published - Mar 2010 |
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Keywords
- Internal photo-effect
- Luminescence
- Thallium-doped cesium iodide
ASJC Scopus subject areas
- Radiation
- Instrumentation
Cite this
Recombination luminescence of CsI(Tl) under electron pulse irradiation. / Trefilova, L.; Yakovlev, V.; Meleshko, A.; Kosinov, N.
In: Radiation Measurements, Vol. 45, No. 3-6, 03.2010, p. 328-330.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Recombination luminescence of CsI(Tl) under electron pulse irradiation
AU - Trefilova, L.
AU - Yakovlev, V.
AU - Meleshko, A.
AU - Kosinov, N.
PY - 2010/3
Y1 - 2010/3
N2 - The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.
AB - The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.
KW - Internal photo-effect
KW - Luminescence
KW - Thallium-doped cesium iodide
UR - http://www.scopus.com/inward/record.url?scp=77955303487&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955303487&partnerID=8YFLogxK
U2 - 10.1016/j.radmeas.2009.10.099
DO - 10.1016/j.radmeas.2009.10.099
M3 - Article
VL - 45
SP - 328
EP - 330
JO - Radiation Measurements
JF - Radiation Measurements
SN - 1350-4487
IS - 3-6
ER -