Recombination luminescence of CsI(Tl) under electron pulse irradiation

Abstract

The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (E_e = 250 keV, t_1/2 = 10 ns, j = 2 ÷ 160 mJ/cm²) has been studied. It has been discovered that the slow emission rise is due to hole V_k-Tl⁰ recombination luminescence at temperature from 100 to 160 K and electron-V_kA recombination, where electrons released from single Tl⁰ at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.

Original language	English
Pages (from-to)	328-330
Number of pages	3
Journal	Radiation Measurements
Volume	45
Issue number	3-6
DOIs	https://doi.org/10.1016/j.radmeas.2009.10.099
Publication status	Published - Mar 2010

Keywords

Internal photo-effect
Luminescence
Thallium-doped cesium iodide

ASJC Scopus subject areas

Radiation
Instrumentation

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10.1016/j.radmeas.2009.10.099

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Trefilova, L., Yakovlev, V., Meleshko, A., & Kosinov, N. (2010). Recombination luminescence of CsI(Tl) under electron pulse irradiation. Radiation Measurements, 45(3-6), 328-330. https://doi.org/10.1016/j.radmeas.2009.10.099

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abstract = "The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.",

keywords = "Internal photo-effect, Luminescence, Thallium-doped cesium iodide",

author = "L. Trefilova and V. Yakovlev and A. Meleshko and N. Kosinov",

year = "2010",

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doi = "10.1016/j.radmeas.2009.10.099",

language = "English",

volume = "45",

pages = "328--330",

journal = "Radiation Measurements",

issn = "1350-4487",

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T1 - Recombination luminescence of CsI(Tl) under electron pulse irradiation

AU - Trefilova, L.

AU - Yakovlev, V.

AU - Meleshko, A.

AU - Kosinov, N.

PY - 2010/3

Y1 - 2010/3

N2 - The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.

AB - The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.

KW - Internal photo-effect

KW - Luminescence

KW - Thallium-doped cesium iodide

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