Recombination luminescence of CsI(Tl) under electron pulse irradiation

L. Trefilova, V. Yakovlev, A. Meleshko, N. Kosinov

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.

Original languageEnglish
Pages (from-to)328-330
Number of pages3
JournalRadiation Measurements
Volume45
Issue number3-6
DOIs
Publication statusPublished - Mar 2010

Fingerprint

Luminescence
Irradiation
luminescence
electron recombination
irradiation
Electrons
pulses
electrons
temperature
kinetics
Temperature
Kinetics

Keywords

  • Internal photo-effect
  • Luminescence
  • Thallium-doped cesium iodide

ASJC Scopus subject areas

  • Radiation
  • Instrumentation

Cite this

Recombination luminescence of CsI(Tl) under electron pulse irradiation. / Trefilova, L.; Yakovlev, V.; Meleshko, A.; Kosinov, N.

In: Radiation Measurements, Vol. 45, No. 3-6, 03.2010, p. 328-330.

Research output: Contribution to journalArticle

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AB - The luminescence kinetics of CsI(Tl) exposed to an electron pulse irradiation (Ee = 250 keV, t1/2 = 10 ns, j = 2 ÷ 160 mJ/cm2) has been studied. It has been discovered that the slow emission rise is due to hole Vk-Tl0 recombination luminescence at temperature from 100 to 160 K and electron-VkA recombination, where electrons released from single Tl0 at temperature from 180 to 300 K. The effect of Tl concentration on both processes has been investigated.

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