Recombination kinetics in nonlinear defective LiB3O5 crystals

I. N. Ogorodnikov, A. V. Porotnikov, A. V. Kruzhalov, V. Yu Yakovlev

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

Original languageEnglish
Pages (from-to)1817-1822
Number of pages6
JournalPhysics of the Solid State
Volume40
Issue number11
Publication statusPublished - Nov 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Recombination kinetics in nonlinear defective LiB<sub>3</sub>O<sub>5</sub> crystals'. Together they form a unique fingerprint.

  • Cite this

    Ogorodnikov, I. N., Porotnikov, A. V., Kruzhalov, A. V., & Yakovlev, V. Y. (1998). Recombination kinetics in nonlinear defective LiB3O5 crystals. Physics of the Solid State, 40(11), 1817-1822.