Recombination kinetics in nonlinear defective LiB₃O₅ crystals

I. N. Ogorodnikov, A. V. Porotnikov, A. V. Kruzhalov, V. Yu Yakovlev

Division for Materials Science

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Abstract

A study of recombination kinetics in LiB₃O₅ (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B²⁺, and hole, O^-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

Original language	English
Pages (from-to)	1817-1822
Number of pages	6
Journal	Physics of the Solid State
Volume	40
Issue number	11
Publication status	Published - Nov 1998

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Ogorodnikov, I. N., Porotnikov, A. V., Kruzhalov, A. V., & Yakovlev, V. Y. (1998). Recombination kinetics in nonlinear defective LiB₃O₅ crystals. Physics of the Solid State, 40(11), 1817-1822.

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abstract = "A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.",

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AU - Ogorodnikov, I. N.

AU - Porotnikov, A. V.

AU - Kruzhalov, A. V.

AU - Yakovlev, V. Yu

PY - 1998/11

Y1 - 1998/11

N2 - A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

AB - A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.

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Recombination kinetics in nonlinear defective LiB3O5 crystals

Abstract

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Recombination kinetics in nonlinear defective LiB₃O₅ crystals