A study of recombination kinetics in LiB3O5 (LBO) crystals by time-resolved luminescence and absorption spectroscopy is reported. An investigation of the kinetics of transient optical absorption (TOA) and luminescence under ns-scale electron-beam excitation performed within a broad temperature range of 77-500 K and a 1.2-5-eV spectral interval has established that the specific features in the recombination kinetics observed in LBO involve electronic, B2+, and hole, O-, trapping centers. The TOA and luminescence kinetics, as well as their temperature dependence, are interpreted by a model of competing hole centers. Relations connecting the kinetics parameters and the temperature dependence to the parameters of the main LBO point defects are presented.
|Number of pages||6|
|Journal||Physics of the Solid State|
|Publication status||Published - Nov 1998|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics