Recombination and photo sensitivity centres in ion irradiated nitride of boron

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Photoelectrical and electroluminescent properties of the ions modified boron nitride was investigated. Correlation between energetic and kinetic parameters of the luminescence and electrical transport was established. Scheme of existing in initial material thermal-equilibrium and radiation defects discrete levels was built in frame of the elaborated earlier electronic models. Effect of electronic transitions with defects levels participation on the material dielectrical and optical properties was determined.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalFizika i Khimiya Obrabotki Materialov
Issue number6
Publication statusPublished - Nov 1997

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Photosensitivity
Nitrides
Boron
Ions
Defects
Boron nitride
Kinetic parameters
Luminescence
Materials properties
Optical properties
Radiation
boron nitride
Hot Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Recombination and photo sensitivity centres in ion irradiated nitride of boron. / Kabyshev, A. V.; Konusov, F. V.; Lopatin, V. V.

In: Fizika i Khimiya Obrabotki Materialov, No. 6, 11.1997, p. 21-26.

Research output: Contribution to journalArticle

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