Recombination and photo sensitivity centres in ion irradiated nitride of boron

A. V. Kabyshev, F. V. Konusov, V. V. Lopatin

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Abstract

Photoelectrical and electroluminescent properties of the ions modified boron nitride was investigated. Correlation between energetic and kinetic parameters of the luminescence and electrical transport was established. Scheme of existing in initial material thermal-equilibrium and radiation defects discrete levels was built in frame of the elaborated earlier electronic models. Effect of electronic transitions with defects levels participation on the material dielectrical and optical properties was determined.

Original languageEnglish
Pages (from-to)21-26
Number of pages6
JournalFizika i Khimiya Obrabotki Materialov
Issue number6
Publication statusPublished - Nov 1997

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ASJC Scopus subject areas

  • Materials Science(all)

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